Fairchild FDP5645 FDB5645 Data Handbook

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March 2000

FDP5645/FDB5645 60V N-Channel Power Trench® MOSFET General Description Features This N-Channel MOSFET has been designed • 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V specifically to improve the overall efficiency of DC/DC

RDS(ON) = 0.011 Ω @ VGS = 6 V.

converters using either synchronous or conventional switching PWM controllers.

• Critical DC electrical parameters specified at elevated temperature.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable

• Rugged internal source-drain diode can eliminate the

RDS(ON) specifications.

need for an external Zener diode transient suppressor.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power

• High performance trench technology for extremely

supply designs with higher overall efficiency.

low RDS(ON).

• 175°C maximum junction temperature rating.

TO-220 TO-263AB

FDP Series FDB Series

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter FDP5645 FDB5645 Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 ID Maximum Drain Current – Continuous (note 3)

– Pulsed

Total Power Dissipation @ TC = 25°C WPD

Derate above 25°C 0.83 W/°C

TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C TL Maximum lead termperature for soldering purposes, +275 °C

1/8“ from case for 5 seconds

Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 1.2 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB5645 FDB5645 13” 24mm 800 units

FDP5645 FDP5645 note 2

 2000 Fairchild Semiconductor Corporation FDP5645/FDB5645 Rev B (W)