Fairchild FDP46N30 Data Handbook

查询FDP46N30供应商 FD P46N 30 300V N -C hannel M SFET

August 2005

Uni FETTM

FDP46N30 300V N-Channel MOSFET Features Description 46A, 300V, RDS(on) = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

Low gate charge (typical 58 n C)

DMOS technology.

Low Crss (typical 60 p F)

This advanced technology has been especially tailored to mini-

Fast switching mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

100% avalanche tested

commutation mode. These devices are well suited for high effi-

Improved dv/dt capability cient switched mode power supplies and active power factor

correction.

TO-220

FDP Series G

Absolute Maximum Ratings Symbol Parameter FDP46N30 Unit VDSS Drain-Source Voltage

ID Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 27.6

IDM Drain Current - Pulsed (Note 1)

VGSS Gate-Source voltage ±30

EAS Single Pulsed Avalanche Energy (Note 2) m J

IAR Avalanche Current (Note 1)

EAR Repetitive Avalanche Energy (Note 1) 41.7 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 3.3 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case 0.30 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com FDP46N30 Rev. A