Fairchild FDP075N15A FDB075N15A Specifications Manual
Summary
This high-performance N-Channel PowerTrench MOSFET is designed for demanding power applications, featuring an extremely low 7.5mΩ On Resistance (Rds(on)) and handling up to 130A at 150V. The comprehensive manual provides detailed technical specifications, including switching characteristics, thermal profiles, and electrical constants, enabling precise hardware design. It is essential for engineers developing efficient DC-DC converters, synchronous rectifiers, advanced battery chargers, motor drives, and uninterruptible power supplies (UPS).
Page 1 Text Content
/F -C l P r T re
July 2011
FDP075N15A_F102 / FDB075N15A N-Channel Power Trench® MOSFET 150V, 130A, 7.5mΩ
Features Description RDS(on) = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been
Fast Switching
especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Low Gate Charge
High Performance Trench Technology for Extremely Low RDS(on)
Application
High Power and Current Handling Capability
DC to DC Converters
Ro HS Compliant
Synchronous Rectification for Telecommunication PSU
Battery Charger
AC motor drives and Uninterruptible Power Supplies Off-line UPS
D2-PAK
TO-220G
FDB Series G
MOSFET Maximum Ratings TC = 25o C unless otherwise noted*
FDP075N15A_F102
Symbol Parameter Units
FDB075N15A
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±20
-Continuous (TC = 25
ID Drain Current
-Continuous (TC = 100
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
(TC = 25
PD Power Dissipation
- Derate above 25o C 2.22 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Package limitation current is 120A.
Thermal Characteristics
FDP075N15A_F102
Symbol Parameter Units
FDB075N15A
RθJC Thermal Resistance, Junction to Case 0.45
RθJA Thermal Resistance, Junction to Ambient 62.5
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDP075N15A_F102 / FDB075N15A Rev. C0
Page Summary Contents For Fairchild FDP075N15A FDB075N15A Specifications Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 678.46 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current rating for this MOSFET?
At 25°C, the continuous drain current ($D_{o}$) is rated up to 130 A.
What types of power systems are ideal applications for this component?
It is suitable for DC to DC Converters, synchronous rectification, battery chargers, AC motor drives, and Uninterruptible Power Supplies (UPS).
How can I determine if the device will overheat in my circuit?
The thermal resistance ($ heta_{JA}$) is 62.5 °C/W, and careful derating is required for temperatures above 25°C.
What are the key electrical performance features of this MOSFET?
It features a low gate charge and PowerTrench technology tailored to maintain superior switching performance while minimizing on-state resistance (6.25 mΩ).