Fairchild FDP047AN08A0 Data Handbook

查询FDP047AN08供应商

April 2002

FDP047AN08A0 N-Channel Ultra FET® Trench MOSFET 75V, 80A, 4.7mΩ Features Applications r DS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92n C (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs

Primary Switch for 24V and 48V systems

Formerly developmental type 82684

DRAIN

SOURCE(FLANGE) DRAIN GATE

STO-220AB

FDP SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage

VGS Gate to Source Voltage ±20 Drain Current

AContinuous (TC < 144o C, VGS = 10V)

Continuous (TC = 25o C, VGS = 10V, with RθJA = 62o C/W) Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) m J Power dissipation

Derate above 25o C 2.0 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case TO-220 0.48

RθJA Thermal Resistance Junction to Ambient TO-220 (Note 2)

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

©2002 Fairchild Semiconductor Corporation FDP047AN08A0 Rev. A