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Fairchild FDH27N50 Data Handbook

Summary

The FDH27N50 N-Channel Power MOSFET is a high-efficiency component designed specifically for advanced SMPS applications, including PFC Boost, Forward, 그리고 Buck converters. Featuring low gate charge and reduced $R_{DS(ON)}$, it optimizes performance in demanding power systems. This comprehensive datasheet is essential for engineers and designers, providing detailed electrical characteristics, thermal handling curves, switching parameters, and reliability data needed to build robust and high-performance power supplies.

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Page 1 Text Content

查询FDH27N50供应商

August 2002

FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features

Low Gate Charge Qg results in Simple Drive Require-

Switch Mode Power Supplies(SMPS), such as

PFC Boost

Two-Switch Forward Converter Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness

Single Switch Forward Converter

Reduced r DS(ON)

Flyback Converter

Buck Converter Reduced Miller Capacitance and Low Input Capacitance

High Speed Switching

Improved Switching Speed with Low EMI

175°C Rated Junction Temperature

Package Symbol

JEDEC TO-247

SOURCE DRAIN

DRAIN (FLANGE)

Absolute Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter Ratings Units

VDSS Drain to Source Voltage

VGS Gate to Source Voltage ±30

Drain Current

AContinuous (TC = 25o C, VGS = 10V)

Continuous (TC = 100o C, VGS = 10V) 19 Pulsed (Note 1) Power dissipation

Derate above 25o C W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Soldering Temperature for 10 seconds 300 (1.6mm from case) Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)

Thermal Characteristics

RθJC Thermal Resistance Junction to Case 0.33

RθCS Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 TYP

RθJA Thermal Resistance Junction to Ambient

©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2

Page Summary Contents For Fairchild FDH27N50 Data Handbook

Page 1 查询FDH27N50供应商 August 2002 FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Require- Switch Mode Power Supplies(SMPS), such as ...
Page 2 27N Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDH27N50 FDH27N50 TO-247 Tube Electrical Characteristics Tc = 25°C (unless otherwise noted) Sym...
Page 3 27N Typical Characteristics , D IN , D IN , C PA IT TJ = 25o C TJ = 175o C VGS DESCENDING VGS DESCENDING PULSE DURATION = 80µs PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX VDS, DR...
Page 4 27N Typical Characteristics (Continued) , S IN θJ IZ IM OPERATION IN THIS AREA LIMITED BY RDS(ON) TJ = 25o C TJ = 175o C 10ms , D IN DC TC = 25o C VDS, DRAIN TO SOURCE VOLTAGE (V) VSD, SOURCE TO DRAIN...
Page 5 27N Test Circuits and Waveforms VDS BVDSS VARY t P TO OBTAIN REQUIRED PEAK IAS RG 0V IAS Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms Qg(TOT) VGS = 10V DUT VGS = 1V I...

Manual Details

Brand Fairchild
Pages 6
File Size 147.84 KB
Published July 06, 2026
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Frequently Asked Questions

What is the maximum Drain to Source Voltage rating for this MOSFET?

The absolute maximum rating for Drain to Source Voltage (VDSS) is 500 V.

What types of converters can use the FDH27N50 MOSFET?

It is suited for various Switch Mode Power Supplies (SMPS), including PFC Boost, Forward Converters, Flyback Converters, and Buck Converters.

How must I manage power dissipation if operating above 25°C?

The power dissipation must be derated at a rate of 3 W/°C when operating temperatures exceed 25°C.

What is the specified mounting torque recommendation for installation?

The recommended mounting torque is 10 lbf*in, which is equivalent to 1.1 N*m.

What are the key operational benefits of this MOSFET design?

It features low gate charge (Qg) and improved switching speed with low EMI.