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Fairchild FDD8880 Product Manual

Summary

N-Channel PowerTrench MOSFET in D-PAK (TO-252) package for DC/DC converters. The FDD8880 delivers 30V with 58A continuous current and 9mohm on-resistance at 10V gate drive. Optimized for low gate charge and fast switching, it improves efficiency in synchronous and conventional PWM topologies. Uses high-performance trench technology. Key specs: 1.1V threshold, 1720pF input capacitance, 10ns/8ns rise/fall. RoHS compliant, -55 to 175C. Targeted at power electronics engineers.

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Page 1 Text Content

April 2008

FDD8880 tm N-Channel Power Trench® MOSFET 30V, 58A, 9mΩ General Description Features This N-Channel MOSFET has been designed specifically to r DS(ON) = 9mΩ, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM r DS(ON) = 12mΩ, VGS = 4.5V, ID = 35A

controllers. It has been optimized for low gate charge, low

High performance trench technology for extremely low

r DS(ON) and fast switching speed.

r DS(ON)

Low gate charge

Applications

High power and current handling capability

DC/DC converters

• Ro HS Compliant

TO-252D-PAK (TO-252)

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGS Gate to Source Voltage ±20

Drain Current

AContinuous (TC = 25o C, VGS = 10V) (Note 1)

ID Continuous (TC = 25o C, VGS = 4.5V) (Note 1)

Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 52o C/W) Pulsed Figure 4

EAS Single Pulse Avalanche Energy (Note 2) m J

Power dissipation

Derate above 25o C 0.37 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case TO-252 2.73

RθJA Thermal Resistance Junction to Ambient TO-252

RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8880 FDD8880 TO-252AA 13” 12mm 2500 units

2008 Fairchild Semiconductor Corporation FDD8880 Rev. B3

Page Summary Contents For Fairchild FDD8880 Product Manual

Page 1 April 2008 FDD8880 tm N-Channel Power Trench® MOSFET 30V, 58A, 9mΩ General Description Features This N-Channel MOSFET has been designed specifically to r DS(ON) = 9mΩ, VGS = 10V, ID = 35A improve the ...
Page 2 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V VDS = 24...
Page 3 Typical Characteristics TC = 25°C unless otherwise noted , N IZ IS IP IO LT IP IE CURRENT LIMITED BY PACKAGE VGS = 10V VGS = 4.5V TC, CASE TEMPERATURE (o C) TC, CASE TEMPERATURE (o C) Figure 1. Normal...
Page 4 Typical Characteristics TC = 25°C unless otherwise noted (O IN , D IN , D IN IS TA If R = 0 t AV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 10µs t AV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STA...
Page 5 Typical Characteristics TC = 25°C unless otherwise noted , C PA IT IZ VGS = VDS, ID = 250µA ID = 250µA TJ, JUNCTION TEMPERATURE (o C) TJ, JUNCTION TEMPERATURE (o C) Figure 11. Normalized Gate Threshol...
Page 6 Test Circuits and Waveforms BVDSS VARY t P TO OBTAIN IAS REQUIRED PEAK IAS RG 0V IAS Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms VDD Qg(TOT) VGS = 10V VGS Qg(5) VDD ...
Page 7 Thermal Resistance vs. Mounting Pad Area The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines RθJA = 33.32+ 23.84/(0.268+Area) EQ.2 the maxim...
Page 8 PSPICE Electrical Model .SUBCKT FDD8880 2 1 3 ; rev April 2004 Ca 12 8 9.5e-10 Cb 15 14 9.5e-10 LDRAIN Cin 6 8 1.15e-9 DPLCAP DRAIN Dbody 7 5 Dbody MOD RLDRAIN RSLC1 Dbreak 5 11 Dbreak MOD DBREAK Dplc...
Page 9 SABER Electrical Model rev April 2004 template FDD8880 n2,n1,n3 electrical n2,n1,n3 var i iscl dp..model dbodymod = (isl=2e-12,ikf=10,nl=1.01,rs=3.76e-3,trs1=8e-4,trs2=2e-7,cjo=4.8e-10,m=0.55,tt=1e-17...
Page 10 PSPICE Thermal Model th JUNCTION REV 23 April 2004 FDD8880T CTHERM1 TH 6 8e-4 CTHERM2 6 5 1e-3 CTHERM3 5 4 2.5e-3 RTHERM1 CTHERM1 CTHERM4 4 3 2.6e-3 CTHERM5 3 2 8e-3 CTHERM6 2 TL 1.5e-2 RTHERM1 TH 6 1...
Page 11 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive li...

Manual Details

Brand Fairchild
Pages 11
File Size 498.90 KB
Published June 17, 2026
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Frequently Asked Questions

What is the maximum continuous drain current of the FDD8880 at 25°C with 10V gate-source voltage?

58A, limited to 35A by the package.

What are the typical on-resistance values for the FDD8880?

9mΩ at Vgs=10V, 12mΩ at Vgs=4.5V, both at Id=35A.

What is the operating temperature range of the FDD8880?

-55°C to 175°C for both operating and storage.

What package does the FDD8880 use?

It uses the TO-252 (D-PAK) surface mount package.