Fairchild FDD86252 Specifications manual

FD 86252 N -C hannel Pow er Trench SFET

September 2011

FDD86252 N-Channel Power Trench® MOSFET 150 V, 27 A, 52 m Features General Description

This N-Channel MOSFET is produced using Fairchild

Max r DS(on) = 52 m at VGS = 10 V, ID = 5 A

Semiconductor‘s advanced Power Trench® process that has

Max r DS(on) = 72 m at VGS = 6 V, ID = 4 A

been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

100% UIL tested

Ro HS Compliant Application

DC - DC Conversion

TO -252D-PAK (TO-252)

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units

VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25 °C 42 -Continuous (Silicon limited) TC = 25 °C

-Continuous TA = 25 °C (Note 1a) -Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25 °C

Power Dissipation TA = 25 °C (Note 1a) 3.1

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RJC Thermal Resistance, Junction to Case 1.4

RJA Thermal Resistance, Junction to Ambient (Note 1a)

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86252 FDD86252 D-PAK(TO-252) 13 ’’ 12 mm 2500 units

©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD86252 Rev.C