# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Fairchild FDD8447L Specifications Manual

Summary

This robust N-Channel MOSFET is designed with PowerTrench technology for superior switching performance in demanding applications. The manual provides comprehensive technical specifications, detailing operational limits, low $R_{DS(on)}$, and dynamic characteristics crucial for accurate design implementation. It is essential documentation for electrical engineers building reliable power supplies and high-efficiency inverters requiring dependable solid-state switching capabilities.

📄 Preview PAGE OF 6

Page 1 Text Content

FD 8447L 40V N -C hannel Pow er Trench FET

May 2008

FDD8447L 40V N-Channel Power Trench® MOSFET 40V, 50A, 8.5mΩ Features General Description Max r DS(on) = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary Power Trench® technology to

Max r DS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A

deliver low r DS(on) and optimized BVDSS capability to offer

Fast Switching superior performance benefit in the application.

Ro HS Compliant

Applications Inverter Power Supplies

TO -252D-PAK (TO-252)

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage

VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC= 25°C -Continuous (Silicon limited) TC= 25°C 57

-Continuous TA= 25°C (Note 1a) 15.2 -Pulsed 100 IS Max Pulse Diode Current EAS Drain-Source Avalanche Energy (Note 3) m J Power Dissipation TC= 25°C 44

PD W TA= 25°C (Note 1a) 3.1

TA= 25°C (Note 1b) 1.3

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case 2.8

Thermal Resistance, Junction to Ambient (Note 1a) °C/WRθJA

RθJA Thermal Resistance, Junction to Ambient (Note 1b) 96

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8447L FDD8447L D-PAK(TO-252) 13’’ 12mm 2500 units

©20 08 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FD D8447L Rev.C3

Page Summary Contents For Fairchild FDD8447L Specifications Manual

Page 1 FD 8447L 40V N -C hannel Pow er Trench FET May 2008 FDD8447L 40V N-Channel Power Trench® MOSFET 40V, 50A, 8.5mΩ Features General Description Max r DS(on) = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel ...
Page 2 FD 8447L 40V N -C hannel Pow er Trench SFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Bre...
Page 3 FD 8447L 40V N -C hannel Pow er Trench SFET , D IN EN (A , D IN EN (A Typical Characteristics LI ZE IN -S -R ES IS TA 4.0VVGS = 10V VGS = 3.0V 0.5 1.5 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRE...
Page 4 FD 8447L 40V N -C hannel Pow er Trench SFET , D IN EN (A Typical Characteristics I(p k) , P EA SI EN EN (A S, TE -S VO LT (V f = 1MHz ID = 14A VDS = 10V VGS = 0 V Qg, GATE CHARGE (n C) VDS, DRAIN TO S...
Page 5 FDD8447L Rev.C1 4 www.fairchildsemi.com www.fairchildsemi.com3 FDD8447L Rev.C FD 8447L 40V N -C hannel Pow er Trench SFET Typical Characteristics r( t), LI ZE FF EC TI VE TR SI EN TH ER ES IS TA RθJA(...
Page 6 FD 8447L 40V P-C hannel Pow er Trench SFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries,...

Manual Details

Brand Fairchild
Pages 6
File Size 513.77 KB
Published July 10, 2026
0 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What are the key electrical specifications of this MOSFET?

It has a 40V drain-to-source voltage, a continuous drain current up to 50A (Silicon limited), and an on-resistance (r) that maxes out at 8.5mΩ.

What types of applications is the device designed for?

It is suitable for use in Inverters and Power Supplies.

How safe is this component to handle extreme heat changes?

The operating junction temperature range is wide, spanning from -55°C to +150°C.

What are the thermal characteristics when mounted on a copper pad?

Its R (Thermal Resistance), Junction to Ambient is 40 °C/W when mounted on a 1 in² pad of 2 oz copper.