Fairchild FDD3510H Specifications Manual
Summary
This technical manual details the FDD3510H dual N and P-Channel PowerTrench MOSFET, a component designed for high-performance switching applications like inverters and H-bridges. Suitable for power management engineers and electronics designers, it provides comprehensive electrical characteristics, thermal data, and reliability specifications for this RoHS-compliant, 80V device.
Page 1 Text Content
FD 3510H ual N P-C hannel Pow er Trench SFET
April 2008
FDD3510H Dual N & P-Channel Power Trench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
Max r DS(on) = 80mΩ at VGS = 10V, ID = 4.3A
advanced Power Trench® process that has been especially
Max r DS(on) = 88mΩ at VGS = 6V, ID = 4.1A
tailored to minimize on-state resistance and yet maintain Q2: P-Channel superior switching performance.
Max r DS(on) = 190mΩ at VGS = -10V, ID = -2.8A
Applications
Max r DS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
Inverter
100% UIL Tested
H-Bridge
Ro HS Compliant
Dual DPAK 4L N-Channel P-Channel
MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units
VDS Drain to Source Voltage -80 VGS Gate to Source Voltage ±20 ±20 Drain Current - Continuous TC = 25°C 13.9 -9.4
ID 4.3 -2.8 A - Continuous TA = 25°C
- Pulsed -10 Power Dissipation for Single Operation TC = 25°C (Note 1)
PD 3.1 W TA = 25°C (Note 1a) TA = 25°C (Note 1b) 1.3
EAS Single Pulse Avalanche Energy (Note 3) m J TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 3.5
RθJC Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.9
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD3510H FDD3510H TO-252-4L 13” 12mm 2500 units
©20 08 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FD D3510H Rev.C
Page Summary Contents For Fairchild FDD3510H Specifications Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 428.39 KB |
| Published | June 15, 2026 |
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Frequently Asked Questions
What is the maximum drain current for the N-channel at 25°C?
13.9 A continuous at 25°C, 20 A pulsed.
Is this MOSFET RoHS compliant?
Yes, RoHS compliant as stated in Features.
What are typical applications for the FDD3510H?
Inverter and H-Bridge applications.
What is the operating junction temperature range?
-55 to +150°C.