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Fairchild FDC5612 Specifications Manual

Summary

The FDC5612 is a high-efficiency, N-Channel PowerTrench MOSFET designed specifically for advanced DC/DC power converters that require superior performance and small footprints. This datasheet provides comprehensive technical details on its robust characteristics, including low on-resistance ($\text{R}_{\text{DS(on)}}$), fast switching capabilities, and minimal gate charge. It is essential reference material for electronics engineers designing power supply systems that demand high overall efficiency in space-constrained modules using the SuperSOT-6 package.

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December 2004

FDC5612 60V N-Channel Power Trench® MOSFET General Description Features This N-Channel MOSFET has been designed

• 4.3 A, 60 V. RDS(ON) = 0.055 Ω @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional RDS(ON) = 0.064 Ω @ VGS = 6 V

switching PWM controllers.

Low gate charge (12.5n C typical).

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)

Fast switching speed.

specifications.

High performance trench technology for extremely

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power supply low RDS(ON).

designs with higher overall efficiency.

Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Super SOTTM -6

Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 ID Drain Current - Continuous (Note 1a) 4.3

Drain Current - Pulsed

PD Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 0.8

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity

.562 FDC5612 7’’ 8mm 3000 units

2004 Fairchild Semiconductor Corporation FDC5612 Rev. C2

Page Summary Contents For Fairchild FDC5612 Specifications Manual

Page 1 December 2004 FDC5612 60V N-Channel Power Trench® MOSFET General Description Features This N-Channel MOSFET has been designed • 4.3 A, 60 V. RDS(ON) = 0.055 Ω @ VGS = 10 V specifically to improve the ...
Page 2 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS Br...
Page 3 , D IN (O IZ , D IN -S Typical Characteristics IN -S -R IS VGS = 10V 6.0V 4.5V VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variatio...
Page 4 Typical Characteristics , D IN (A , G -S r( t) , N IZ IV IE IS ID = 4.3A VDS = 10V f = 1 MHz VGS = 0 V Qg, GATE CHARGE (n C) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Fig...
Page 5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST...