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Fairchild FDB8447L Specifications manual

Summary

Datasheet for the Fairchild FDB8447L 40V N-Channel PowerTrench MOSFET for inverter and power supply applications. Features 8.5 milliohm max RDS(on) at 10V, 50A continuous drain current, fast switching, and RoHS compliance using proprietary PowerTrench technology in TO-263AB package. Target users: power supply designers, inverter engineers, and automotive electronics manufacturers needing high-current low-resistance MOSFETs for DC-DC converters and bridge inverter circuits in efficient power management systems.

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FD 8447L 40V N -C hannel Pow er Trench FET

February 2007

FDB8447L 40V N-Channel Power Trench® MOSFET 40V, 50A, 8.5mΩ Features General Description Max r DS(on) = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary Power Trench® technology to

Max r DS(on) = 11mΩ at VGS = 4.5V, ID = 11A

deliver low r DS(on) and optimized BVDSS capability to offer

Fast Switching superior performance benefit in the application.

Ro HS Compliant

Application Inverter Power Supplies

TO-263AB FDB Series

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units

VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC= 25°C -Continuous (Silicon limited) TC= 25°C (Note 1)

-Continuous TA= 25°C (Note 1a) -Pulsed 100 EAS Drain-Source Avalanche Energy (Note 3) m J Power Dissipation TC= 25°C 60

Power Dissipation (Note 1a) 3.1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case (Note 1) 2.1

RθJA Thermal Resistance, Junction to Ambient (Note 1a)

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB8447L FDB8447L TO-263AB 330mm 24mm 800 units

©20 07 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FD B8447L Rev.C

Page Summary Contents For Fairchild FDB8447L Specifications manual

Page 1 FD 8447L 40V N -C hannel Pow er Trench FET February 2007 FDB8447L 40V N-Channel Power Trench® MOSFET 40V, 50A, 8.5mΩ Features General Description Max r DS(on) = 8.5mΩ at VGS = 10V, ID = 14A This N-Cha...
Page 2 FD 8447L 40V N -C hannel Pow er Trench SFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Bre...
Page 3 FD 8447L 40V N -C hannel Pow er Trench SFET Typical Characteristics TJ = 25°C unless otherwise noted LI ZE , D IN EN (A , D IN EN (A IN -R ES IS TA PULSE DURATION = 80µs VGS = 3V DUTY CYCLE = 0.5%MAX ...
Page 4 FD 8447L 40V N -C hannel Pow er Trench SFET Typical Characteristics TJ = 25°C unless otherwise noted S, TE VO LT E( V) , D IN EN (A S, VA LA EN T( ID = 14A VDD = 10V Ciss VDD = 20V VDD = 30V f = 1MHz ...
Page 5 FD 8447L 40V N -C hannel Pow er Trench SFET Typical Characteristics TJ = 25°C unless otherwise noted LI ZE ER IM PE E, θJ DUTY CYCLE-DESCENDING ORDER 0.1 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEA...
Page 6 FD 8447L 40V N -C hannel Pow er Trench SFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaus...

Manual Details

Brand Fairchild
Pages 6
File Size 431.22 KB
Published June 17, 2026
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Frequently Asked Questions

What is the maximum continuous drain current for the FDB8447L?

50A at 25°C for the package, 66A for the silicon.

What is the thermal resistance from junction to ambient?

40°C/W when mounted on a 1 in² pad of 2 oz copper.

What is the typical turn-on delay time?

11 ns typical, 20 ns maximum under specified conditions.

Is this MOSFET RoHS compliant?

Yes, it is listed as RoHS compliant.

What is the drain-source breakdown voltage?

40V minimum at 250µA drain current with V_GS at 0V.