Fairchild FDB3682 FDP3682 Data Handbook
Summary
The FDB3682/FDP3682 is a high-reliability N-Channel PowerTrench MOSFET engineered for critical power conversion applications up to 100V and 32A. Designed to meet stringent automotive standards (AEC Q101), it excels in use within DC/DC converters, Off-Line UPS systems, and complex distributed power architectures. This technical manual provides comprehensive electrical characteristics, including on/off switching times, detailed leakage current specifications, and critical thermal derating curves. It is essential documentation for electrical engineers designing reliable, high-power electronic modules for industrial and automotive control systems.
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September 2002
FDB3682 / FDP3682 N-Channel Power Trench® MOSFET 100V, 32A, 36mΩ Features Applications r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5n C (Typ.), VGS = 10V
Distributed Power Architectures and VRMs
Low Miller Charge
Primary Switch for 24V and 48V Systems
Low QRR Body Diode
High Voltage Synchronous Rectifier
UIS Capability (Single Pulse and Repetitive Pulse)
Direct Injection / Diesel Injection System
Qualified to AEC Q101
Formerly developmental type 82755 42V Automotive Load Control
Electronic Valve Train System
DRAIN SOURCE DRAIN
(FLANGE)
SOURCE
TO-263AB TO-220ABDRAIN
FDB SERIES (FLANGE) FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGS Gate to Source Voltage ±20
Drain Current
AContinuous (TC = 25o C, VGS = 10V)
ID Continuous (TC = 100o C, VGS = 10V)
Continuous (Tamb = 25o C, VGS = 10V, RθJA = 43o C/W) Pulsed Figure 4
EAS Single Pulse Avalanche Energy (Note 1) m J
Power dissipation
Derate above 25o C 0.63 W/o C
TJ, TSTG Operating and Storage Temperature -55 to 175
Thermal Characteristics
RθJC Thermal Resistance Junction to Case TO-220, TO-263 1.58
RθJA Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation FDB3682 / FDP3682 Rev. B
Page Summary Contents For Fairchild FDB3682 FDP3682 Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 11 |
| File Size | 217.49 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What is the device's basic function and key specifications?
The FDB3682/FDP3682 is an N-Channel PowerTrench MOSFET rated for 100V, 32A, and has a max on-resistance (r) of 36mΩ typical.
What are the thermal resistances for the TO-220 and TO-263 packages?
The Junction to Case (RthJC) is 1.58°C/W for both, but Junction to Ambient (RthJA) is 62°C/W for TO-220 and 43°C/W for TO-263.
Does this MOSFET qualify for automotive use?
Yes, it is qualified to AEC Q101 and the product has been designed to meet extreme test conditions for the automotive industry.
What must be considered when derating peak current capability?
The peak current must be derated above 25°C using a factor derived from ambient temperature (T) via the formula: I = I25 * V / T.