Fairchild FDB20AN06A0 FDP20AN06A0 Data Handbook
Summary
A high-reliability N-Channel Power Trench MOSFET designed specifically for demanding automotive applications. This robust component offers 60V and 45A switching capabilities, ideal for motor control, powertrain management systems, ABS controls, and DC-DC converters. The accompanying technical datasheet provides comprehensive details on electrical characteristics, thermal parameters ($\theta_{JA}$), dynamic switching thresholds, and performance ratings required to ensure reliable operation in advanced power architectures built to AEC Q101 standards.
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June 2003
FDB20AN06A0 / FDP20AN06A0 N-Channel Power Trench® MOSFET 60V, 45A, 20mΩ Features Applications r DS(ON) = 17mΩ (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15n C (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
Formerly developmental type 82547
DRAIN
SOURCE(FLANGE) GATE
DRAIN GATE
SOURCE DRAIN (FLANGE)TO-220AB
STO-263AB
FDP SERIES FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage
VGS Gate to Source Voltage ±20 Drain Current
AContinuous (TC = 25o C, VGS = 10V)
ID Continuous (TC = 100o C, VGS = 10V)
Continuous (Tamb = 25o C, VGS = 10V, RθJA = 43o C/W) Pulsed Figure 4 EAS Single Pulse Avalanche Energy ( Note 1) m J Power dissipation
Derate above 25o C 0.60 W/o C
TJ, TSTG Operating and Storage Temperature -55 to 175
Thermal Characteristics
RθJC Thermal Resistance Junction to Case TO-220, TO-263 1.67
RθJA Thermal Resistance Junction to Ambient TO-220, TO-263 ( Note 2) 62
RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation FDB20AN06A0 / FDP20AN06A0 Rev. B
Page Summary Contents For Fairchild FDB20AN06A0 FDP20AN06A0 Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 11 |
| File Size | 554.62 KB |
| Published | June 05, 2026 |
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Frequently Asked Questions
What is the maximum drain-to-source voltage and continuous drain current?
The maximum drain to source voltage ($V_{DSS}$) is 60 V, and the continuous drain current is 45 A.
Is this MOSFET suitable for automotive applications?
Yes, it has been designed and qualified to meet demanding automotive industry requirements, including AEC Q101 certification.
What should I be aware of regarding critical device usage?
The product is not authorized for use as a critical component in life support devices or systems without express written approval from the manufacturer.