Fairchild FDA69N25 Specifications Manual
Summary
Discover this high-performance N-Channel MOSFET, built with advanced planar DMOS technology for superior switching and efficiency. This component is engineered to handle challenging high-voltage applications up to 250V and deliver continuous current up to 69A. The included manual provides comprehensive technical details, including detailed electrical characteristics, thermal profiles, and absolute maximum ratings crucial for precise circuit design. It is ideally suited for engineers designing efficient switched mode power supplies, active power factor correction circuits, and advanced electronic lamp ballasts.
Page 1 Text Content
FD 69N 25 250V N -C hannel M SFET
May 2006
Uni FET TM
FDA69N25 250V N-Channel MOSFET Features Description 69A, 250V, RDS(on) = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect
Low gate charge ( typical 77 n C) transistors are produced using Fairchild’s proprietary, planar Low Crss ( typical 84p F) stripe, DMOS technology. Fast switching This advanced technology has been especially tailored to Improved dv/dt capability minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
TO-3PN SD FDA Series
Absolute Maximum Ratings Symbol Parameter FDA69N25 Units VDSS Drain-Source Voltage
VDS(Avalanche) Repetitive Avalanche Voltage (Note 1) (Note 2)
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) 44.2
IDM Drain Current - Pulsed (Note 1)
VGSS Gate-Source Voltage ± 30
EAS Single Pulsed Avalanche Energy (Note 2) m J
IAR Avalanche Current (Note 1)
EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 3.84 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter FDA69N25 Units RθJC Thermal Resistance, Junction-to-Case 0.26 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FDA69N25 Rev. A
Page Summary Contents For Fairchild FDA69N25 Specifications Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 720.20 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What package does the FDA69N25 MOSFET use?
It uses the TO-3PN package.
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is 69A.
Can this MOSFET be used in life support devices?
No, it is not authorized for use in life support devices without written approval.
What is the typical gate charge of the FDA69N25?
The typical gate charge is 77 nC.