Fairchild FCA36N60NF Specifications Manual
Summary
Engineered for demanding power conversion applications, this high-performance N-Channel MOSFET employs advanced SuperMOS™ technology to deliver superior switching efficiency and rugged reliability. Featuring ultra-low gate charge and low on-resistance, it is ideal for AC-DC SMPS, PFC circuits, server/telecom power supplies, and industrial systems. The accompanying manual provides comprehensive details on the device’s electrical characteristics, thermal performance curves, and detailed operational parameters necessary for expert design integration by electrical engineers.
Page 1 Text Content
FC 36N 60N F N -C hannel M SFET, FR FET
February 2011
Supre MOS
FCA36N60NF tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description RDS(on) = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The Supre MOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
Ultra Low Gate Charge ( Typ. Qg = 86n C)
process that differentiates it from preceding multi-epi based tech- Low Effective Output Capacitance nologies. By utilizing this advanced technology and precise pro- cess control, Supre MOS provides world class Rsp, superior
100% Avalanche Tested switching performance and ruggedness.
This Supre MOS MOSFET fits the industry’s AC-DC SMPS
Ro HS Compliant
requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
TO-3PN
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FCA36N60NF Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30
Continuous (TC = 25o C) 34.9
ID Drain Current
Continuous (TC = 100o C)
IDM Drain Current Pulsed (Note 1) 104.7 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current 12 EAR Repetitive Avalanche Energy 3.12 m J Peak Diode Recovery dv/dt (Note 3)
dv/dt V/ns
MOSFET dv/dt Ruggedness
(TC = 25o C)
PD Power Dissipation
Derate above 25o C 2.6 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FCA36N60NF Units
RθJC Thermal Resistance, Junction to Case 0.40
o C/WRθCS
Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient 40
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FCA36N60NF Rev. A
Page Summary Contents For Fairchild FCA36N60NF Specifications Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 263.60 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What is the maximum drain-to-source breakdown voltage?
The device has a Drain to Source Voltage (DSS) of 600 V.
What is the typical on-resistance at standard test conditions?
The static drain to source on-resistance (Rds(on)) is listed as 80 mΩ (Typ.)
What operating temperature range should I adhere to?
The specified Operating and Storage Temperature Range is from -55°C to +150°C.
How can I ensure I purchase genuine parts for reliable performance?
Buy Fairchild parts directly or from Authorized Fairchild Distributors.