Fairchild 2N5962 MMBT5962 NPN General Purpose Amplifier Data Manual

Discrete POWER & Signal Technologies

MMBT59622N5962

TO-92

SOT-23 Mark: 117

NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 m A. Sourced from Process 07. See 2N5088 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage 8.0 IC Collector Current - Continuous m A

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units

2N5962 *MMBT5962

PD Total Device Dissipation m W

Derate above 25°C 5.0 2.8 m W/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 1997 Fairchild Semiconductor Corporation