Dell Inspiron BFP650 User Guide Manual
Summary
Infineon BFP650 NPN Silicon Germanium RF transistor datasheet designed for high-power amplifiers and low phase noise oscillators. Key specifications include 70GHz transition frequency, 21dB maximum available gain at 1.8GHz, 0.9dB noise figure at 1.8GHz, 13V collector-emitter voltage, 150mA collector current, and SOT343 surface-mount package with gold metallization.
Page 1 Text Content
BFP650
NPN Silicon Germanium RF Transistor Preliminary data For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 d B at 1.8 GHz Noise figure F = 0.9 d B at 1.8 GHz Gold metallization for high reliability VPS05605 70 GHz f T- Silicon Germanium technology
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package BFP650 R5s 1=B 2=E 3=C 4=E SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO Collector-emitter voltage VCES Collector-base voltage VCBO
Emitter-base voltage VEBO 1.2
Collector current IC m A
Base current IB
Total power dissipation1) Ptot m W
TS 75°C
Junction temperature Tj °C
Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit
Junction - soldering point2) Rth JS K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of Rth JA please refer to Application Note Thermal Resistance
Mar-27-20031
Page Summary Contents For Dell Inspiron BFP650 User Guide Manual
Manual Details
| Brand | Dell |
|---|---|
| Pages | 6 |
| File Size | 197.21 KB |
| Published | July 03, 2026 |
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Frequently Asked Questions
BFP650工作时最大的可用增益是多少？
在1.8 GHz时，最大可用增益G为21 dB。
该晶体管能承受的最高结温范围是什么？
器件的最大允许操作结温（Tj）是150°C。
如何保证BFP650的高可靠性使用？
应注意其封装采用了金金属化工艺以确保高可靠性，并注意ESD处理规定的电静放电敏感性。
在计算热阻R时需要参考哪个文件或说明？
请参阅应用笔记（Application Note）来计算实际的热阻R。