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VISHAY 1N4001 L - 1N4007 L Data Sheet User Manual

Summary

Optimize your power electronics designs with this comprehensive series of high-performance rectifier diodes. Ideal for robust AC-to-DC conversion applications, these semiconductors feature reliable operation, low forward voltage drop, and variable current ratings (1N400x series). The technical manual provides essential specifications, including maximum electrical ratings, thermal behavior curves, operating temperature range, and detailed dimensional data. This resource is designed for electronics engineers and professional designers who require precision components for efficient and durable power supply circuit implementation.

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1.0A RECTIFIER

POWER SEMICONDUCTOR

Features Diffused Junction High Current Capability and Low Forward

Voltage Drop AB

Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material: UL Flammability Classification Rating 94V-0

Mechanical Data

DO-41 Plastic A-405 Dim Min Max Min Max

Case: Molded Plastic

Terminals: Plated Leads Solderable per 25.40 25.40

MIL-STD-202, Method 208 4.06 5.21 4.10 5.20 Polarity: Cathode Band

Weight: DO-41 0.30 grams (approx)

A-405 0.20 grams (approx)

All Dimensions in mm

Mounting Position: Any

“L” Suffix Designates A-405 Package

Marking: Type Number

No Suffix Designates DO-41 Package

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic Symbol Unit

4001/L 4002/L 4003/L 4004/L 4005/L 4006/L 4007/L Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR

RMS Reverse Voltage VR(RMS)

Average Rectified Output Current

IO 1.0

(Note 1) @ TA = 75°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load IFSM

(JEDEC Method) Forward Voltage @ IF = 1.0A VFM 1.0 Peak Reverse Current @ TA = 25°C 5.0

IRM µA

at Rated DC Blocking Voltage @ TA = 100°C

Typical Junction Capacitance (Note 2) Cj p F Typical Thermal Resistance Junction to Ambient RθJA K/W Maximum DC Blocking Voltage Temperature TA +150 °C Operating and Storage Temperature Range (Note 3) Tj, TSTG -65 to +175 °C

Notes: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1. MHz and applied reverse voltage of 4.0V DC. 3. JEDEC Value

DS28002 Rev. E-2 of 2 1N4001/L-1N4007/L

Page Summary Contents For VISHAY 1N4001 L - 1N4007 L Data Sheet User Manual

Page 1 1.0A RECTIFIER POWER SEMICONDUCTOR Features Diffused Junction High Current Capability and Low Forward Voltage Drop AB Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material: UL...
Page 2 IF IE (A PULSE WIDTH 300µs 2% DUTY CYCLE AMBIENT TEMPERATURE (ºC) INSTANTANEOUS FORWARD VOLTAGE (V) Fig. Forward Current Derating Curve Fig. Typical Forward Characteristics IT (p IN (A 25ºCj 1MHz 8.3m...

Manual Details

Brand Vishay
Pages 2
File Size 29.60 KB
Published July 16, 2026
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Frequently Asked Questions

When designing for a capacitive load, how must I adjust the current?

The current must be derated by 20% when dealing with a capacitive load.

What is the maximum non-repetitive peak surge current rating?

It has a rating up to 30 A Peak, measured using the JEDEC Method.

What mechanical packaging options are available for these semiconductors?

The devices are available in two packages: DO-41 and A-405.