Toshiba SSM3J01T Data Sheet
Summary
This advanced P-Channel MOSFET power switch, SSM3J01T, is designed for high-speed switching applications requiring low on-resistance and compact integration. This manual provides comprehensive technical specifications, detailing electrical characteristics, maximum ratings, and essential handling precautions necessary for proper circuit design. It is intended for engineers and designers building general electronic equipment, including industrial robotics, computing devices, and domestic appliances, ensuring optimal performance in demanding power management systems.
Page 1 Text Content
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SSM3J01T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J01T
Power Management Switch
Unit: mm
High Speed Switching Applications
Small Package Low on Resistance : Ron = 0.4 Ω (max) (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V) Low Gate Threshold Voltage
Maximum Ratings (Ta 25°C)
Characteristic Symbol Rating Unit
Drain-Source voltage VDS 30 V Gate-Source voltage VGSS 10 V
DC ID 1.7
Drain current IDP
Pulse 3.4
(Note2) PD
Drain power dissipation (Ta 25C) 1250 m W
(Note1)
Channel temperature Tch 150 C JEDEC ―
Storage temperature range Tstg 55~150 C
JEITA ―
Note 1: Mounted on FR4 board
TOSHIBA 2-3S1A
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm2, t 10 s)
Weight: 10 mg (typ.)
Note 2: The pulse width limited by max channel temperature.
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
Marking Equivalent Circuit
Page Summary Contents For Toshiba SSM3J01T Data Sheet
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 5 |
| File Size | 157.26 KB |
| Published | July 22, 2026 |
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Frequently Asked Questions
What precautions must be taken when handling the device?
When handling individual devices, protect the environment from electrostatic electricity. Operators should wear anti-static clothing.
How does heat dissipation affect power ratings?
The drain power dissipation varies according to the board material, area, thickness, pad area, and the operating environment; always account for heat dissipation.
What is the recommended voltage for reliable switching operation?
Use a gate-source (GS) voltage of 2.5 V or higher to ensure proper turn-on characteristics.
What limits the maximum drain current during pulse operations?
The pulse width must be limited by the maximum channel temperature.