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Toshiba CT60J321 Data Sheet

Summary

Discover the GT60J321, a high-performance N-Channel IGBT transistor from TOSHIBA designed for robust power management solutions. This comprehensive datasheet provides essential electrical specifications, detailed performance curves, and maximum ratings crucial for effective circuit design. Whether you are building industrial equipment, robotics, or general electronic systems, this manual offers necessary parameters covering transient behavior, switching characteristics, and soft switching applications. It is the definitive resource for engineers selecting reliable components for high-power conversion circuits.

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查询GT60J321供应商

GT60J321

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT60J321

The 4th Generation

Unit: mm

Soft Switching Applications

Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)

Maximum Ratings (Ta  25°C)

Characteristics Symbol Rating Unit

Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES 25 V

DC IC 60

Collector current

1 ms ICP 120 DC IECF 60 Emitter-collector forward

current 1 ms IECPF 120

JEDEC ―

Collector power dissipation

JEITA ―

(Tc  25°C) PC 200 W

TOSHIBA 2-21F2C

Junction temperature Tj 150 °C Storage temperature range Tstg 55~150 °C Weight: 9.75 g (typ.) Screw torque  0.8 N・m

Equivalent Circuit

Collector

Emitter

Page Summary Contents For Toshiba CT60J321 Data Sheet

Page 1 查询GT60J321供应商 GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Unit: mm Soft Switching Applications Enhancement-mode High speed: tf = 0.30 µs (typ....
Page 2 GT60J321 Electrical Characteristics (Ta  25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE  25 V, VCE  0   500 n A Collector cut-off current ICES VCE ...
Page 3 GT60J321 ol le ct or ur re nt (A ol le ct or -e itt er ol ta ge V) ol le ct or ur re nt (A IC – VCE VCE – VGE 20 Common emitter Common emitter Tc  25°C Tc  40°C VGE  8 V IC  10 A Collector-emitte...
Page 4 GT60J321 ol le ct or -e itt er ol ta ge Sw itc hi ng ti s) Sw itc hi ng ti s) at e- em itt er ol ta ge V) VCE, VGE – QG C – VCE Common emitter RL  5 Tc  25°C Common emitter VGE  0 Coes f  1 MHz Cr...
Page 5 GT60J321 Ju nc tio ca pa ci ta nc p F Fo rw ar cu rre nt (A ol le ct or ur re nt Reverse bias SOA rth (t) – tw Tc  25°C Diode Tj 125°C VGE  15 V RG  18 Collector-emitter voltage VCE (V) Pulse widt...
Page 6 GT60J321 000707EAARESTRICTIONS ON PRODUCT USE TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or f...

Manual Details

Brand Toshiba
Pages 6
File Size 171.48 KB
Published June 02, 2026
33 views

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Frequently Asked Questions

What is the maximum collector-emitter voltage rating?

The Collector-emitter voltage ($V_{CES}$) is rated at 600 V.

What types of applications is this IGBT designed for?

It is intended for general electronics applications, including industrial robotics and domestic appliances, specifically enhancing soft switching performance.

Are there any restrictions regarding its use in critical systems?

No. It should not be used in equipment requiring extraordinarily high reliability, such as medical or life-support instruments (Unintended Usage).

What is the recommended screw torque for mounting?

The specified screw torque (stg) required is 0.8 N·m.