Toshiba TPCS8209 Data Sheet

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TPCS8209

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPCS8209

Lithium Ion Battery Applications

Unit: mm

Notebook PC Applications Portable Machines and Tools

• Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V

DC (Note 1) ID 5

JEDEC ―

Drain current

Pulse (Note 1) IDP 20

JEITA ―

Single-device

operation (Note 3a) PD (1) 1.1 Drain power TOSHIBA 2-3R1E

dissipation

(t = 10 s) Single-device value Weight: 0.035 g (typ.) (Note 2a) at dual operation PD (2) 0.75 (Note 3b)

Single-device Circuit Configuration

operation (Note 3a) PD (1) 0.6 Drain power

dissipation

(t = 10 s) Single-device value 8 7 6 5

(Note 2b) at dual operation PD (2) 0.35 (Note 3b)

Single pulse avalanche energy (Note 4) EAS 32.5 m J Avalanche current IAR 5 A Repetitive avalanche energy Single-device value at dual operation EAR 0.075 m J

(Note 2a, 3b, 5)

Channel temperature Tch 150 °C

Storage temperature range Tstg −55~150 °C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.

This transistor is an electrostatic sensitive device. Please handle with caution.