ROHM Semiconductor RTR025N05 Data Sheet

Summary

A high-performance, low on-resistance N-channel MOSFET designed specifically for efficient switching applications. Featuring a compact TSMT3 surface mount package and integrated G-S protection diode, this component simplifies circuit design while maintaining reliability. The accompanying technical documentation provides comprehensive electrical characteristics, absolute maximum ratings, thermal performance data, and detailed body diode curves necessary for engineers designing power management systems, general electronic devices, or switching circuits requiring high efficiency.

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ROHM Semiconductor RTR025N05 Data Sheet - Page 1

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Page 1 Text Content

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

TSMT3

1.0MAX

Features (3)

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3).

Each lead has same dimensions(1) Gate

(2) Source

Abbreviated symbol : PW

Application (3) Drain

Switching

Packaging specifications Inner circuit

Package Taping (3)

Type Code TL

Basic ordering unit (pieces)

RTR025N05

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit (2) (1) Gate

(2) Source

Drain-source voltage VVDSS ∗1 ESD PROTECTION DIODE

(3) Drain

∗2 BODY DIODE

Gate-source voltage ±12 VVGSS

Continuous ±2.5 AID

Drain current

Pulsed ±10 AIDP Source current Continuous 0.8 AIS

(Body diode) ∗1

Pulsed AISP

Total power dissipation 1.0 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C / WRth (ch-a) ∗ When mounted on a ceramic board

1/4 www.rohm.com 2009.06 - Rev.A

Page Summary Contents For ROHM Semiconductor RTR025N05 Data Sheet

Page 1 2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 1.0MAX Features (3) 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Packa...

Page 2 Data Sheet RTR025N05 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS= ±12V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID= ...

Page 3 Data Sheet RTR025N05 ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R on )[m ES IS TA : R S( on )[m S( AI EN : I [A Body diode characteristics curves Ta=25°C Ta=25°C VGS= 4.5V VDS= 10V VGS...

Page 4 Data Sheet RTR025N05 ST AT IC AI -S -S TA TE AP AC IT AN : C [p F] ES IS TA : R S( )[m Ta=25°C Ta=25°C td(off) VDD= 25V Pulsed tf VGS=4.5V ID= 2.5A RG=10Ω Pulsed ID= 1.2A Ta=25°C VDD= 25V td(on) ID= 2...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	156.15 KB
Published	May 31, 2026

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Frequently Asked Questions

What is the maximum continuous drain current rating?

The continuous ID rating for this MOSFET is ±2.5 A.

Is this device suitable for safety-critical applications like aerospace equipment?

No, it should not be used in systems requiring an extremely high level of reliability, such as medical or transportation equipment.

What are the thermal characteristics if mounted on a ceramic board?

The channel to ambient thermal resistance (Rth (ch-a)) is rated at 125 °C / W when mounted this way.

What protective features does the MOSFET include?

It includes both Low On-resistance and a built-in G-S Protection Diode.