ROHM Semiconductor RMW150N03 Data Sheet

Summary

This powerful Silicon N-channel MOSFET is engineered for demanding power switching applications requiring low on-resistance and consistently high-speed performance. The comprehensive manual provides detailed technical data, covering absolute maximum ratings, full electrical characteristics, thermal management guidelines, and advanced testing measurements. It is the ideal component resource for power electronics engineers designing robust, efficient, and reliable switching circuits.

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ROHM Semiconductor RMW150N03 Data Sheet - Page 1

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Page 1 Text Content

Data Sheet

4.5V Drive Nch MOSFET RMW150N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET PSOP8

Features

1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 1pin mark (1) (2) (3) (4)

3) Low voltage drive(4.5V drive). 0.9

Application Switching

Packaging specifications Inner circuit

Package Taping

Type Code TB Basic ordering unit (pieces) RMW150N03

(1) Source (2) Source ∗2 (3) Source (4) Gate

(5) Drain ∗1

Absolute maximum ratings (Ta = 25C)

(6) Drain (7) Drain

Parameter Symbol Limits Unit

(8) Drain (1) (2) (3) (4)

Drain-source voltage VDSS

∗1 ESD PROTECTION DIODE 5.

Gate-source voltage VGSS 20 ∗2 BODY DIODE

Continuous ID 15

Drain current

Pulsed IDP *1 60

Source current Continuous IS 2.5

(Body Diode) Pulsed ISP *1 Power dissipation PD *2 3.0

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm×40mm Cu BOARD

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) 41.7 C / W *2 MOUNTED ON 40mm×40mm Cu BOARD

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Page Summary Contents For ROHM Semiconductor RMW150N03 Data Sheet

Page 1 Data Sheet 4.5V Drive Nch MOSFET RMW150N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET PSOP8 Features 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 1pin mar...

Page 2 Data Sheet RMW150N03 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RMW150N03 Electrical characteristic curves (Ta=25C) ST AT IC AI -S -S TA TE AI EN : I [A ES IS TA : R [m AI EN : I [A Fig.2 Typical Output Characteristics(Ⅱ) Fig.1 Typical Output Characte...

Page 4 Data Sheet RMW150N03 ST AT IC AI -S -S TA TE AT E- SO VO LT AG : V [V FO AR AN SF ER IT TA : | Yf s| [S SI ST AN : R S( )[m Fig.7 Forward Transfer Admittance Fig.8 Reverse Drain Current vs. Drain Curr...

Page 5 Data Sheet RMW150N03 AI EN : I A) Fig.13 Maximum Safe Operating Aera Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us PW =...

Page 6 Data Sheet RMW150N03 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	504.24 KB
Published	May 31, 2026

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Frequently Asked Questions

What safety precaution should be taken when handling this product?

This product might cause chip aging and breakdown in a large electrified environment; designers should consider using an ESD protection circuit.

What is the thermal resistance of the device mounted on a Cu board?

The thermal resistance (Rth(ch-a)) for mounting on a 40mm x 40mm Cu board is listed as 41.7 °C/W.

How much drain voltage can this MOSFET handle?

The absolute maximum rating for the Drain-source voltage (Vdss) is 30 V.

What is the specified Gate-Source voltage range?

The gate-source voltage (Vgs) has an absolute maximum rating of ±20 V.