ROHM IMX9 Owner's Manual and User Guide
Summary
High-performance IMX9 isolated dual transistors are mounted in a compact SMT package, ensuring independent operation for reliable circuit design. This comprehensive technical manual provides engineers with detailed schematics and data sheets, covering absolute maximum ratings, electrical characteristics (such as gain bandwidth products and saturation curves), and precise packaging specifications. Ideal for industrial designers creating general-purpose electronic equipment, including communications and automation devices.
Page 1 Text Content
Transistors
General purpose transistor (isolated dual transistors) IMX9
Features External dimensions (Units : mm)
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting 1.1+0.2 −0.1
machine. 0.95 0.95 0.8±0.1
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
All terminals have same dimensions
Structure Epitaxial planar type
ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X9
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
Absolute maximum ratings (Ta = 25°C) Equivalent circuit Parameter Symbol Limits Unit
Collector-base voltage VCBO (4) (5) (6)
Collector-emitter voltage VCEO
Emitter-base voltage VEBO Collector current IC m A
Power dissipation Pd 300(TOTAL) m W Junction temperature Tj °C Storage temperature Tstg −55~+150 °C ∗ 200m W per element must not be exceeded.
Electrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO IC=10µA Collector-emitter breakdown voltage BVCEO IC=1m A Emitter-base breakdown voltage BVEBO IE=10µA Collector cutoff current ICBO 0.5 µA VCB=20V Emitter cutoff current IEBO 0.5 µA VEB=10V Collector-emitter saturation voltage VCE(sat) 0.18 0.4 IC/IB=500m A/20m A DC current transfer ratio h FE VCE=3V, IC=10m A
Transition frequency f T MHz VCE=10V, IE=−50m A, f=100MHz Output capacitance Cob p F VCB=10V, IE=0A, f=1MHz Output On-resistance Ron 0.8 IB=1m A, Vi=100m Vrms, f=1k Hz
Page Summary Contents For ROHM IMX9 Owner's Manual and User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 4 |
| File Size | 50.07 KB |
| Published | June 01, 2026 |
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Frequently Asked Questions
What is the maximum total power dissipation rating?
The total power dissipation is 300 mW (TOTAL).
How is interference minimized in this transistor?
Since the transistor elements are independent, they eliminate interference.
When running at typical operating conditions, what is the collector-emitter saturation voltage?
The minimum specified value for VCE(sat) appears to be 0.18 V (IC/IB=500mA/20mA).
Can this transistor be used in high-reliability safety equipment?
No, it is designed for ordinary electronic equipment and should not be used where failure endangers human life; consult a representative for such applications.