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ROHM 2SB1695 User's Manual

Summary

This advanced transistor, designed as a low frequency amplifier, is essential for engineers building robust electronic circuits. The detailed manual provides comprehensive technical specifications, covering absolute maximum ratings, electrical characteristics, saturation voltages, and switching dynamics across various temperatures and loads. Ideal for designers requiring reliable power handling and precise signal amplification in demanding applications, this component ensures optimal performance integration into your custom circuitry.

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2SB1695

Transistors

Low frequency amplifier 2SB1695

Application External dimensions (Unit : mm)

Low frequency amplifier

TSMT3

Driver

1.0MAX

Features (3)

1) A collector current is large.

2) VCE(sat) ≤−370m V (2)(1) 0.950.95

at IC =−1A / IB =−50m A 0.16

(1) Base (2) Emitter

(3) Collector Each lead has same dimensions

Absolute maximum ratings (Ta=25°C) Packaging specifications

Parameter Symbol Limits Unit Package Taping

1. Collector-base voltage VCBO −30 2.

Type Code TL

Collector-emitter voltage VCEO −30

Basic ordering unit (pieces)

Emitter-base voltage VEBO −6

2SB1695

IC −1.5 0. 3~ 0.

Collector current

ICP −3

Power dissipation PC m W

Junction temperature Tj °C Range of storage temperature Tstg −55~+150 °C ∗Single pulse, PW=1ms

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −30 IC=−10µA

Collector-emitter breakdown voltage BVCEO −30 IC=−1m A

Emitter-base breakdown voltage BVEBO −6 IE=−10µA

Collector cutoff current ICBO −100 n A VCB=−30V

Emitter cutoff current IEBO −100 n A VEB=−6V Collector-emitter saturation voltage VCE(sat) −200 −370 m V IC=−1A, IB=−50m A

DC current gain h FE VCE=−2V, IC=−100m A

Transition frequency f T MHz VCE=−2V, IE=100m A, f=100MHz Corrector output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz

∗ Pulsed

Rev.A 1/2

Page Summary Contents For ROHM 2SB1695 User's Manual

Page 1 2SB1695 Transistors Low frequency amplifier 2SB1695 Application External dimensions (Unit : mm) Low frequency amplifier TSMT3 Driver 1.0MAX Features (3) 1) A collector current is large. 2) VCE(sat) ≤−...
Page 2 IT TE IN IT ib (p F) LL 2SB1695 IC IN h F LL TO TP IT ob (p F) Transistors Electrical characteristic curves VCE=−2V Ta=25°C Ta=100°C Pulsed Pulsed Ta=−40°C Ta=25°C Ta=25°C VBE(sat) Ta=100°C Ta=−40°C I...
Page 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 3
File Size 105.66 KB
Published July 22, 2026
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Frequently Asked Questions

What is the collector current gain (hFE)?

The DC current gain (hFE) ranges from 270 to 680.

What are the absolute maximum ratings for this transistor?

Key limits include VCBO -30V, VCEO -30V, and ICp -3A. The Power Dissipation is 500 mW.

How is a low-frequency amplifier used?

Its application is specified as a dedicated low frequency amplifier for general circuits.

What happens if I use this device in safety critical equipment?

If using it where malfunction endangers human life (e.g., medical or transport systems), consult a sales representative first.