ROHM 2SB1707 User's Manual

2SB1707

Transistors

Low frequency amplifier 2SB1707

Application External dimensions (Unit : mm)

Low frequency amplifier

TSMT3

Driver

1.0MAX

Features (3)

1) A collector current is large. (4A)

2) VCE(sat) ≤ −250m V (2)(1) 0.950.95

At IC = −2A / IB = −40m A 0.16

(1) Base (2) Emitter

(3) Collector Each lead has same dimensions

Absolute maximum ratings (Ta=25°C) Packaging specifications

Parameter Symbol Limits Unit Package Taping

1. Collector-base voltage VCBO −15 2.

Type Code TL

Collector-emitter voltage VCEO −12

Basic ordering unit (pieces)

Emitter-base voltage VEBO −6

IC −4 2SB1707

Collector current 0. 3~ 0.

ICP −8 Power dissipation PC m W

Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C ∗Single pulse, PW=1ms

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −15 IC= −10µA

Collector-emitter breakdown voltage BVCEO −12 IC= −1m A

Emitter-base breakdown voltage BVEBO −6 IE= −10µA

Collector cutoff current ICBO −100 n A VCB= −15V

Emitter cutoff current IEBO −100 n A VEB= −6V

Collector-emitter saturation voltage VCE(sat) −150 −250 m V IC= −2A, IB= −40m A DC current gain h FE VCE= −2V, IC= −200m A Transition frequency f T MHz VCE= −2V, IE=200m A, f=100MHz

Collector output capacitance Cob p F VCB= −10V, IE=0A, f=1MHz

∗ Pulsed

Rev.B 1/2