# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Philips PDTC114TK User Guide

Summary

Philips PDTC114TK NPN resistor-equipped transistor data sheet provides complete technical specifications for this bias-resistor transistor in SC-59 (SOT-23) surface-mount package. Features built-in 10kΩ input resistor (R1), 50V collector-emitter voltage rating, 100mA collector current capability, and DC current gain of 200 minimum. Includes limiting values, thermal characteristics, electrical characteristics, and package dimensions. Designed for space reduction in interface and driver circuits, with PNP complement PDTA114TK available for complementary designs.

📄 Preview PAGE OF 8

Page 1 Text Content

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

PDTC114TK NPN resistor-equipped transistor

Product specification May

Supersedes data of 1997 May 28 File under Discrete Semiconductors, SC04

Page Summary Contents For Philips PDTC114TK User Guide

Page 1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage PDTC114TK NPN resistor-equipped transistor Product specification May Supersedes data of 1997 May 28 File under Discrete Semiconductors, SC04
Page 2 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK FEATURES Built-in bias resistor R1 (typ. kΩ) Simplification of circuit design handbook, halfpage Reduces number ...
Page 3 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN...
Page 4 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK MGM902 MGM901 handbook, halfpage handbook, halfpage (1) h FE (3) VCEsat (V) IC (m A) IC (m A) VCE V. IC/IB 10. (...
Page 5 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT346 e1 bp detail X scale DIMENSIONS (mm are the orig...
Page 6 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for...
Page 7 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK NOTES
Page 8 Philips Semiconductors – a worldwide company Argentina: see South America Middle East: see Italy Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg....

Manual Details

Brand Philips
Pages 8
File Size 60.17 KB
Published June 18, 2026
1 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What are the primary benefits of using this transistor?

It simplifies circuit design by reducing the number of components and board space due to its built-in bias resistor R1.

What is the required thermal management for operation?

The maximum possible total power dissipation (tot amb) at T ≤ 25 °C is 250 mW.

How is it characterized in terms of voltage limits?

It has a collector-emitter voltage (CEO) open base limit of -50 V and a peak collector current ($I_{CM}$) limit of -100 mA.

What function does the built-in resistor R1 serve?

R1 is an input resistor with a typical value of 10 kΩ, aiding in circuit simplicity and space reduction.