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PHILIPS BUK100-50GS Data Sheet User Manual

Summary

This robust TOPFET power MOSFET is a high-performance, overload-protected switch designed for general-purpose switching in demanding applications such as automotive systems, lamps, motors, and solenoids. It features integrated protections against overtemperature, short circuits, and overvoltage transients, ensuring reliable operation even under stress. The accompanying manual provides comprehensive technical specifications, limiting values, thermal data, and operational guidelines, making it an essential resource for electrical engineers who require a highly dependable switching solution for power electronic design.

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查询BUK100-50GS供应商 Philips Semiconductors Product specification

Power MOS transistor BUK100-50GS TOPFET

DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET

in a 3 pin plastic envelope, intended VDS Continuous drain source voltage

as a general purpose switch for ID Continuous drain current automotive systems and other PD Total power dissipation applications. Tj Continuous junction temperature ˚C

RDS(ON) Drain-source on-state resistance mΩ

APPLICATIONS VIS = 10 V General controller for driving lamps motors solenoids heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage DRAIN Low on-state resistance Overload protection against over temperature Overload protection against

short circuit load

Latched overload protection CLAMP

POWER

reset by input

INPUT

10 V input level RIG MOSFET

Low threshold voltage also allows 5 V control Control of power MOSFET

LOGIC AND

and supply of overload

protection circuits PROTECTION

derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION

TOPFET

input drain source

tab drain

November 1996 Rev 1.300

Page Summary Contents For PHILIPS BUK100-50GS Data Sheet User Manual

Page 1 查询BUK100-50GS供应商 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload pr...
Page 2 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CO...
Page 3 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j-mb Junction to mou...
Page 4 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET TRANSFER CHARACTERISTICS Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance V...
Page 5 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET PD% Normalised Power Derating Zth / (K/W) BUK100-50GS tp D = tp Tmb / C t / s Fig.2. Normalised limiting power diss...
Page 6 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET RDS(ON) / Ohm BUK100-50GS Normalised RDS(ON) = f(Tj) 0.20 VIS / V = ID / A Tj / C Fig.8. Typical on-state resistanc...
Page 7 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET Energy & Time BUK100-50GS II / m A BUK100-50GS Time / ms Energy / J Tj(TO) Tmb / C VIS / V Fig.14. Typical over...
Page 8 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET VDD VDD = VCL RL LD : adjust for correct ID TOPFET TOPFET VIS VIS ID measure ID measure Fig.20. Test circuit for re...
Page 9 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET EDSM% Iiso normalised to 25 C Tmb / C Tj / C Fig.26. Normalised limiting clamping energy. Fig.29. Normalised input ...
Page 10 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET MECHANICAL DATA Dimensions in mm Net Mass: 2 g max 10,3 max 5,9 min 15,8 max 3,03,0 max not tinned 13,5 min 1,3 max...
Page 11 Philips Semiconductors Product specification Power MOS transistor BUK100-50GS TOPFET DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for pr...

Manual Details

Brand Philips
Pages 11
File Size 115.32 KB
Published July 16, 2026
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Frequently Asked Questions

What types of overload protection are available on the TOPFET?

It provides internal protection against over-temperature, short circuit loads, and instantaneous overload dissipation when a protection supply is provided via the input pin.

What is the maximum rated continuous drain source voltage?

The device specifies a continuous drain source voltage (Vds) up to 50 V.

Is this MOSFET suitable for vehicles or automotive systems?

Yes, it is described as being intended for use as a general purpose switch in automotive systems and other applications.