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PHILIPS BSH206 User Guide

Summary

Philips BSH206 P-channel enhancement mode MOS transistor specification. Logic-level compatible with low threshold voltage, fast switching, 0.18 ohm on-resistance at -4.5V, and -12V rating in SOT363 package. For battery-powered apps and digital interfacing. For circuit engineers in portable electronics.

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查询BSH206供应商

Philips Semiconductors Product specification

P-channel enhancement mode BSH206 MOS transistor

FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = -12 V • Fast switching • Logic level compatible ID = -0.75 A • Subminiature surface mount package RDS(ON) ≤ 0.5 Ω (VGS = -2.5 V)

VGS(TO) ≥ 0.4 V

GENERAL DESCRIPTION PINNING SOT363 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has low 1,2,5,6 drain

Top view

threshold voltage and extremely fast switching making it ideal for gate battery powered applications and high speed digital interfacing. source

The BSH206 is supplied in the SOT363 subminiature surface mounting package.

LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage -12 VDGR Drain-gate voltage RGS = 20 kΩ -12 VGS Gate-source voltage ± 8 ID Drain current (DC) Ta = 25 ˚C -0.75

Ta = 100 ˚C -0.47

IDM Drain current (pulse peak value) Ta = 25 ˚C -3 Ptot Total power dissipation Ta = 25 ˚C 0.417

Ta = 100 ˚C 0.17

Tstg, Tj Storage & operating temperature - 55 ˚C

THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-a Thermal resistance junction to FR4 board, minimum K/W

ambient footprint

August 1998 Rev 1.000

Page Summary Contents For PHILIPS BSH206 User Guide

Page 1 查询BSH206供应商 Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = -12 V • Fast switching...
Page 2 Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistor ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. ...
Page 3 Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistor Normalised Power Dissipation, PD (%) Peak Pulsed Drain Current, IDM (A) BSH105 D = 0.5 0.2 0.1 0.05 0.02 D...
Page 4 Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistor Drain Current, ID (A) BSH205 -3 Threshold Voltage, VGS(to), (V) 0.7 VDS > ID X RDS(on) -2.5 Tj = 25 C 0...
Page 5 Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistor Gate-source voltage, VGS (V) BSH205 BSH205 Source-Drain Diode Current, IF (A) -6 VDD = 10 V -5 RD = 20 Ohm...
Page 6 Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistor MECHANICAL DATA Plastic surface mounted package; 6 leads SOT363 pin 1 index e1 BMbp Lp detail X scale DIME...
Page 7 Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specificatio...

Manual Details

Brand Philips
Pages 7
File Size 146.10 KB
Published July 04, 2026
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Frequently Asked Questions

What package does the BSH206 use?

It is supplied in the SOT363 subminiature surface mounting package.

What is the max continuous drain current of BSH206 at 25°C?

The maximum continuous drain current is -0.75 A at 25°C.

Is BSH206 suitable for life support systems?

No, it is not designed for use in life support appliances, devices or systems.

What is the max drain-source voltage of BSH206?

The maximum drain-source voltage is -12 V.