# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

PHILIPS BSH102 User Guide

Summary

The BSH102 is a high-speed N-channel enhancement mode MOS transistor housed in an SOT23 package. Designed for critical power management applications, including DC-DC converters, battery systems, and general 'glue-logic' interfacing between C-MOS or TTL logic blocks. This product manual provides comprehensive technical details, covering its precise operational characteristics, absolute maximum ratings, thermal performance curves, and detailed switching timing specifications necessary for optimal design integration.

📄 Preview PAGE OF 12

Page 1 Text Content

查询BSH102供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

andbook, halfpage

BSH102 N-channel enhancement mode MOS transistor

Product specification Dec

Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b

Page Summary Contents For PHILIPS BSH102 User Guide

Page 1 查询BSH102供应商 DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage BSH102 N-channel enhancement mode MOS transistor Product specification Dec Supersedes data of 1997 Jun 19 File under Discrete Semicondu...
Page 2 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor FEATURES PINNING - SOT23 Very low threshold PIN SYMBOL DESCRIPTION High-speed switching No secondary break...
Page 3 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIO...
Page 4 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering ...
Page 5 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor CHARACTERISTICS Tj °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS...
Page 6 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor handbook, full pagewidth VDD 90 % td(on) td(off) tf tr MAM274 ton toff Fig.5 Switching times test circuit ...
Page 7 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor MGM204 MGM202 handbook, halfpage handbook, halfpage VGS (V) VDS (V) VGS ; f MHz; Tamb °C. VDS V; Tamb °C; ...
Page 8 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor MGM208 MGM209 1.2 1.8 handbook, halfpage handbook, halfpage Tj (°C) Tj (°C) RDSon at Tj VGSth at Tj RDSon ...
Page 9 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 e1 bp Lp detail X scale DIMENSIONS (mm are ...
Page 10 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specificatio...
Page 11 Philips Semiconductors Product specification N-channel enhancement mode BSH102 MOS transistor NOTES
Page 12 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 34 Waterloo Road, NORTH RYDE, NSW...

Manual Details

Brand Philips
Pages 12
File Size 100.33 KB
Published July 10, 2026
0 views

Enter the captcha to get the download link:

captcha

Frequently Asked Questions

What is the maximum continuous operating temperature?

The absolute maximum rating allows for an operating junction temperature up to +150 °C.

How do I calculate power derating?

Power dissipation follows a curve based on ambient and tie-point resistances (R_th j-s: 1, 2, 3, or 4).

What are the basic electrical specifications for this transistor?

The drain-source voltage is -30 V, and the gate-source threshold voltage is typically determined by the specified circuit.