PHILIPS BLF277 Product Specificationssheet
Summary
Product specification datasheet (September 1992) for the Philips BLF277 VHF power MOS transistor, an N-channel enhancement mode vertical D-MOS device in SOT119 6-lead flange envelope with ceramic cap and isolated leads. RF performance at 175 MHz: 150W output power with >14 dB gain and >50% efficiency in CW class-B operation at 50V drain supply. Features: high power gain, easy power control, gold metallization for reliability, good thermal stability, and withstands full load mismatch (VSWR rugged
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DATA SHEET
BLF277 VHF power MOS transistor
Product specification September 1992
Page Summary Contents For PHILIPS BLF277 Product Specificationssheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 13 |
| File Size | 105.48 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What precautions must be taken when handling the BLF277 transistor?
The product contains beryllium oxide (BeO), so it is critical that the BeO disc remains undamaged. It must never be thrown out with general or domestic waste.
What are the maximum absolute operating limits for this device?
The limiting values include a drain-source voltage of up to -110V, drain current up to -16A, and total power dissipation up to -220W.
What is the physical package style and structure of the BLF277?
It is supplied in a 6-lead, SOT119 flange envelope with a ceramic cap. All leads are isolated from the flange.
In what type of operation can the transistor be used for high power applications?
The manual provides data and lists applications for Class-B operation under specific thermal and resistance conditions.