PHILIPS BLF368 Product Manual
Summary
Philips BLF368 VHF push-pull power MOS transistor data sheet provides specifications for this dual N-channel enhancement mode D-MOS device in SOT262A1 ceramic package with gold metallization. Designed for broadcast transmitter applications in the VHF frequency range, delivering 300W CW output at 225MHz with 13.5dB typical gain in class-AB operation. Features high power gain, easy power control, and excellent thermal stability. Includes beryllium oxide safety handling warnings. Essential reference for RF power amplifier design engineers in broadcast transmitter applications.
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DATA SHEET
BLF368 VHF push-pull power MOS transistor
Product specification Jul
Supersedes data of September
Page Summary Contents For PHILIPS BLF368 Product Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 16 |
| File Size | 137.41 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What is the BLF368 transistor designed for?
It is a dual push-pull silicon N-channel enhanced mode vertical D-MOS transistor, specifically designed for broadcast transmitter applications in the VHF frequency range.
How should I dispose of this product after use?
Dispose of it as chemical or special waste according to local regulations; it must never be thrown out with general or domestic waste because it contains beryllium oxide (BeO).
What are the absolute maximum operating limits for this component?
The drain-source voltage ($V_{DSS}$) should not exceed -65 V, and total power dissipation ($P_{tot}$) must remain below -500 W.
Is there a concern about electrical discharge when handling it?
Yes, the product requires anti-static packing to prevent damage caused by mounting flanges providing electrostatic discharge during transport and handling.