PHILIPS BLF242 Product Manual
Summary
Product specification for the Philips BLF242 HF/VHF power MOS transistor, an N-channel enhancement mode vertical D-MOS transistor for professional transmitter applications. Features high power gain, low noise, easy power control, thermal stability, and gold metallization reliability in a 4-lead SOT123 flange package. Specified for CW class-B operation at 175MHz with 5W output and over 13dB gain. Target users: RF design engineers and broadcast equipment manufacturers building professional RF power amplifiers and transmitter systems.
Page 1 Text Content
查询BLF242供应商
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF242 HF/VHF power MOS transistor
Product specification September 1992
Page Summary Contents For PHILIPS BLF242 Product Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 11 |
| File Size | 84.34 KB |
| Published | July 04, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What safety precautions should be taken when handling the BLF242?
The product contains beryllium oxide; handle the undamaged BeO disc carefully and dispose of it as special waste.
What is the maximum power dissipation for the BLF242 transistor?
The total power dissipation (P_tot) is up to 16 W at a mounting base temperature (T_mb) of 25°C.
What are the typical performance specs for CW class-B operation at 175 MHz?
At 175 MHz, with 28V drain-source voltage, it typically delivers 5W output power, >13dB gain, and >50% efficiency.
How is the BLF242 transistor packaged?
It comes in a 4-lead, SOT123 flange envelope with a ceramic cap, in an antistatic package.
What is the gate-source voltage limit for the BLF242?
The absolute maximum gate-source voltage is ±20 V.