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PHILIPS BLF202 HF VHF Power MOS Transistor Data Sheet

Summary

This datasheet provides complete specifications for the Philips BLF202 HF/VHF power MOS transistor, an N-channel enhancement mode vertical D-MOS device in an 8-lead SOT409A SMD package designed for communications transmitter applications from 1.6 to 175MHz at 12.5V supply. It details RF performance including 10dB power gain at 2W output, thermal characteristics, and application guidance for HF/VHF radio frequency power amplification.

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DATA SHEET

BLF202 HF/VHF power MOS transistor Product specification Oct

Page Summary Contents For PHILIPS BLF202 HF VHF Power MOS Transistor Data Sheet

Page 1 查询BLF202供应商 DISCRETE SEMICONDUCTORS DATA SHEET BLF202 HF/VHF power MOS transistor Product specification Oct
Page 2 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES PINNING - SOT409A High power gain PIN DESCRIPTION Easy power control 1, 8 source Gold metallization 2, 3 gate G...
Page 3 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS...
Page 4 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 CHARACTERISTICS Tj °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source ...
Page 5 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MGP113 MGP114 handbook, halfpage handbook, halfpage RDSon (Ω) Tj (°C) VDS (V) VGS V; ID 0.3 A. VGS 0; f MHz. Fig.5 Drain...
Page 6 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb °C; RGS Ω; unless otherwise specified. RF performance in CW operation ...
Page 7 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 handbook, full pagewidth C10 C1 L2 output 50 Ω input R2 +VD R4 MGP118 Fig.10 Test circuit for class-B operation.
Page 8 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C11 film dielectric t...
Page 9 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MGP119 MGP120 handbook, halfpage handbook, halfpage Zi (Ω) (Ω) f (MHz) f (MHz) Class B-operation; VDS 12.5 V; IDQ m A; C...
Page 10 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 MOUNTING RECOMMENDATIONS Both the metallized groundplate and leads contribute to the heatflow. It is recommended that th...
Page 11 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409A H1 Bw2 2.5 5 mm scale DIMENSIONS (millimetre dimensions...
Page 12 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product...
Page 13 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 NOTES
Page 14 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 NOTES
Page 15 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 NOTES
Page 16 Philips Semiconductors – a worldwide company Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 82785, Fax. +31 Australia: 3 Figtree Drive, HOMEBUSH, NSW 21...

Manual Details

Brand Philips
Pages 16
File Size 81.36 KB
Published June 18, 2026
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Frequently Asked Questions

What is the function and package of the BLF202?

It is a Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package.

What limits the total power dissipation (P_tot)?

Under T ≤ 85 °C, P_tot max is -5.7 W.

How does the BLF202 handle load mismatch?

It withstands full load mismatch up to VSWR = 50:1 at 175 MHz with a rated load power of 100 W.

What are the electrical characteristics like Rds(on) and fbs?

The typical on-state resistance (Rds(on)) is -3.5 Ω, and the maximum feedback capacitance (Crs) is 16 pF.