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Panasonic 2SC1383, 2SC1384 Owner's Manual and User Guide

Summary

These reliable 2SC1383/2SC1384 transistors are a complementary pair designed specifically for low-frequency power and driver amplification circuits. This technical documentation provides engineers and designers with comprehensive electrical datasheets, including critical specifications like saturation voltages (VCE(sat), VBE(sat)), transition frequencies, and performance curves across varying operating temperatures. Ideal for professional electronics applications requiring stable and dependable switching or amplification components.

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查询2SC1383供应商 Transistor

2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification

Unit: mm

Complementary to 2SA683 and 2SA684

Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684.

Absolute Maximum Ratings (Ta=25˚C)

Parameter Symbol Ratings Unit Collector to 2SC1383

base voltage 2SC1384 Collector to 2SC1383

emitter voltage 2SC1384 +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.271.27

Emitter to base voltage VEBO

1:Emitter

Peak collector current ICP 1.5 2:Collector

3:Base

Collector current IC

EIAJ:SC–51 Collector power dissipation PC TO–92L Package

Junction temperature Tj ˚C Storage temperature Tstg –55 ~ +150 ˚C 0.

Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 20V, IE = 0 0.1 µA

Collector to base 2SC1383

VCBO IC = 10µA, IE = 0

voltage 2SC1384

Collector to emitter 2SC1383

VCEO IC = 2m A, IB = 0

voltage 2SC1384 Emitter to base voltage VEBO IE = 10µA, IC = 0

*1 h FE1 VCE = 10V, IC = 500m A*2

Forward current transfer ratio

h FE2 VCE = 5V, IB = 1A*2

Collector to emitter saturation voltage VCE(sat) IC = 500m A, IB = 50m A*2 0.2 0.4 Base to emitter saturation voltage VBE(sat) IC = 500m A, IB = 50m A*2 0.85 1.2 Transition frequency f T VCB = 10V, IE = –50m A, f = 200MHz MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz p F

*2 Pulse measurement

*1h FE1 Rank classification

Rank h FE1 85 ~ 170 120 ~ 240 170 ~ 340

Page Summary Contents For Panasonic 2SC1383, 2SC1384 Owner's Manual and User Guide

Page 1 查询2SC1383供应商 Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SA683 and 2SA684 Features Low colle...
Page 2 Transistor 2SC1383, 2SC1384 ra ns iti on fr eq ue nc z) ol le ct or to itt er at ur at io vo lta ge ol le ct or ow er is si pa tio (s at PC — Ta IC — VCE IC — IB Ta=25˚C VCE=10V Ta=25˚C IB=10m A ol le...
Page 3 Transistor 2SC1383, 2SC1384 ICEO — Ta Area of safe operation (ASO) VCE=10V Single pulse Ta=25˚C t=10ms ol le ct or ur re nt Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V)

Manual Details

Brand Panasonic
Pages 3
File Size 35.81 KB
Published June 04, 2026
26 views

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Frequently Asked Questions

What is the maximum collector power dissipation for this pair of transistors?

The maximum rated collector power dissipation (Pc) is 1W.

Are these transistors suitable for high-frequency applications?

Their transition frequency (fT) ranges from 200 MHz to 340 MHz, making them viable for RF boosting and driver amplification.

What are the recommended operating temperatures for use?

The specified junction temperature range (Tj) is 150˚C, with storage temperature ranging from –55°C to +150°C.

How does this pair perform under different ambient temperatures?

At 75˚C ambient temperature, the optimal operational parameters are listed in the detailed derating curves provided in the specifications.