MOTOROLA MAC08BT1 series Data Manual

查询MAC08DT1供应商 SEMICONDUCTOR TECHNICAL DATA

Silicon Bidirectional Thyristors

*Motorola preferred devices

Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing.

TRIAC

Sensitive Gate Trigger Current in Four Trigger Modes

0.8 AMPERE RMS

Blocking Voltage to 600 Volts

200 thru 600 Volts

Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel

CASE 318E-04 (SOT-223) STYLE 11

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Blocking Voltage(1) VDRM Volts (1/2 Sine Wave, Gate Open, TJ = 25 to 110°C)

MAC08BT1 MAC08DT1 MAC08MT1

On-State Current RMS (TC = 80°C) IT(RMS) 0.8 Amps Peak Non-repetitive Surge Current ITSM Amps (One Full Cycle, 60 Hz, TC = 25°C)

Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s Peak Gate Power (t < 2.0 µs) PGM 5.0 Watts Average Gate Power (TC = 80°C, t = 8.3 ms) PG(AV) 0.1 Watts Operating Junction Temperature Range TJ –40 to +110 °C Storage Temperature Range Tstg –40 to +150 °C Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum) TL °C THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RθJA °C/W PCB Mounted per Figure 1

Thermal Resistance, Junction to Tab RθJT °C/W Measured on Anode Tab Adjacent to Epoxy

1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

3–40 Motorola Thyristor Device Data