Fairchild MBR735/MBR745/MBR750/MBR760 Schottky Rectifiers Data Manual

MBR735 - MBR760

Features Low power loss, high efficiency. High surge capacity.

PIN 1 +

For use in low voltage, high frequency

PIN 2 -

inverters, free wheeling, and polarity

CASE Positive

protection applications.

Dimensions Metal silicon junction, majority carrier are in: inches (mm)

conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.

TO-220AC

Schottky Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Value

Symbol Parameter Units 735 745 750 760 VRRM Maximum Repetitive Reverse Voltage 35 45 50 60 V IF(AV) Average Rectified Forward Current 7.5 A IFSM Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave 150 A

Tstg Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature -65 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 2.0 W RθJA Thermal Resistance, Junction to Ambient 60 °C/W RθJL Thermal Resistance, Junction to Lead 3.0 °C/W

Electrical Characteristics TA = 25°C unless otherwise noted

Device

Symbol Parameter Units 735 745 750 760

VF Forward Voltage IF = 7.5 A, TC = 25°C 0.75 0.57 0.65

IF = 7.5 A, TC = 125°C

IF = 15 A, TC = 25°C

IF = 15 A, TC = 125°C

IR Reverse Current @ rated VR TA = 25°C 0.1 0.5 m A

TA = 125°C

IRRM Peak Repetitive Reverse Surge Current 1.0 0.5 A

2.0 us Pulse Width, f = 1.0 KHz

MBR735 - MBR760, Rev. C2001 Fairchild Semiconductor Corporation