Fairchild ISL9R30120G2 30A Stealth(TM) Diode Data Manual
Summary
Engineered for high-frequency power conversions, this Stealth™ diode (ISL9R30120G2) provides low loss performance crucial for modern switching applications like SMPS, PFC boosts, UPS, and motor drives. The manual details its specifications, covering exceptional ultra-fast recovery time ($t_r < 56\text{ns}$), robust 1200V handling capability, and soft recovery features. It's the indispensable component for electrical engineers designing high-efficiency power supplies that require minimal ringing without external snubber circuitry.
Page 1 Text Content
IS 9R 30120G
May 2002
ISL9R30120G2 30A, 1200V Stealth™ Diode General Description Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 4.5
The ISL9R30120G2 is a Stealth™ diode optimized for low loss
performance in high frequency hard switched applications. The Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 56ns
Stealth™ family exhibits low reverse recovery current
Operating Temperature . . . . . . . . . . . . . . . . . . . . 150o C
(IRM(REC)) and exceptionally soft recovery under typical
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
operating conditions.
Avalanche Energy Rated
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching
Applications
applications. The low IRM(REC) and short ta phase reduce loss
Switch Mode Power Supplies
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may Hard Switched PFC Boost Diode
be operated without the use of additional snubber circuitry.
UPS Free Wheeling Diode
Consider using the Stealth™ diode with a 1200V NPT IGBT to
Motor Drive FWD
provide the most efficient and highest power density design at
lower cost. SMPS FWD
Formerly developmental type TA49415. Snubber Diode
Package Symbol
JEDEC STYLE 2 LEAD TO-247
ANODE
CATHODE
CATHODE (BOTTOM SIDE METAL)
Device Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VRRM Repetitive Peak Reverse Voltage
VRWM Working Peak Reverse Voltage VR DC Blocking Voltage IF(AV) Average Rectified Forward Current (TC = 80o C) IFRM Repetitive Peak Surge Current (20k Hz Square Wave) IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) PD Power Dissipation EAVL Avalanche Energy (1A, 40m H) m J TJ, TSTG Operating and Storage Temperature Range -55 to 150 °C
TL Maximum Temperature for Soldering TPKG Leads at 0.063in (1.6mm) from Case for 10s °C
Package Body for 10s, See Application Note AN-7528 °C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. A
Page Summary Contents For Fairchild ISL9R30120G2 30A Stealth(TM) Diode Data Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 6 |
| File Size | 143.75 KB |
| Published | June 06, 2026 |
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Frequently Asked Questions
What are the key features of the ISL9R30120G2 diode?
Key features include soft recovery, fast recovery, and low loss performance, making it ideal for high-frequency hard switched applications.
What is the maximum operating voltage and current in this device?
It has a peak reverse voltage (RRM) of 1200 V and an average rectified forward current (I(AV)) of 30 A at T=80°C.
Under what conditions can this diode be used for optimal efficiency?
Using the Stealth™ diode with a 1200V NPT IGBT is recommended to achieve the most efficient and highest power density design.
What standards define its performance in various applications?
It is suitable as an Avalanche Energy rated free wheeling or boost diode in power supplies, UPS, and Switch Mode Power Supplies (SMPS).