FAIRCHILD HUF75345G3, HUF75345P3, HUF75345S3S Data Manual
Summary
These N-Channel Power MOSFETs deliver superior performance and high power efficiency, utilizing advanced UltraFET technology. This comprehensive data sheet covers all necessary specifications—including absolute maximum ratings, thermal characteristics, switching performance, and various package types—making integration reliable. They are essential for engineers designing sophisticated power management solutions, such as efficient switching regulators, motor drivers, and voltage bus switches in portable, battery-operated electronics.
Page 1 Text Content
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HUF75345G3, HUF75345P3, HUF75345S3S
Data Sheet March 2005
75A, 55V, 0.007 Ohm, N-Channel Ultra FET Features Power MOSFETs
These N-Channel power MOSFETs
Simulation Models
are manufactured using the
Temperature Compensated PSPICE® and SABER™
innovative Ultra FET® process. This
Models
advanced process technology
Thermal Impedance SPICE and SABER Models
achieves the lowest possible on-resistance per silicon area,
Available on the WEB at: www.fairchildsemi.com
resulting in outstanding performance. This device is capable
Peak Current vs Pulse Width Curve
of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored
UIS Rating Curve
charge. It was designed for use in applications where power
Related Literature
efficiency is important, such as switching regulators,
TB334, “Guidelines for Soldering Surface Mount
switching converters, motor drivers, relay drivers, low-
Components to PC Boards”
voltage bus switches, and power management in portable and battery-operated products.
Symbol
Formerly developmental type TA75345.
Ordering Information PART NUMBER PACKAGE BRAND HUF75345G3 TO-247 75345G HUF75345P3 TO-220AB 75345P HUF75345S3S TO-263AB 75345S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST.
Packaging
JEDEC STYLE TO-247 JEDEC TO-220AB
SOURCE SOURCE
DRAIN
DRAIN
DRAIN (FLANGE)
DRAIN (TAB)
JEDEC TO-263AB
DRAIN
(FLANGE)
SOURCE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2005 Fairchild Semiconductor Corporation HUF75345G3, HUF75345P3, HUF75345S3S Rev. B1
Page Summary Contents For FAIRCHILD HUF75345G3, HUF75345P3, HUF75345S3S Data Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 241.11 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
What types of applications are recommended for this power MOSFET?
It is designed for high efficiency applications like switching regulators, motor drivers, and power management in portable or battery-operated products.
What key electrical characteristic determines its performance in a switch?
The ultra low Drain to Source On-Resistance (Rds(ON)) is achieved using advanced process technology, resulting in outstanding performance. The typical value is 0.007 Ω at 75A/10V.
How do I order the TO-263AB package variant on tape and reel?
You must append the suffix 'T' to the entire part number, for example: HUF75345S3ST.
Are these components suitable for life support medical systems?
No, Fairchild specifies that its products are not authorized for use as critical components in life support devices without express written approval.