Fairchild FQPF3N90 Data Handbook (1) (1)
Summary
The FQPF3N90 is a high-performance N-Channel MOSFET built with advanced DMOS planar stripe technology, engineered for superior switching capabilities and efficiency up to 900V. Ideal for switch mode power supplies and applications requiring fast current handling and robust performance under high energy pulses. This technical manual provides comprehensive documentation on electrical characteristics, including drain/gate parameters, thermal ratings, and timing specifications necessary for reliable circuit design.
Page 1 Text Content
September 2000
QFETTM
FQPF3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.1A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 20 n C) planar stripe, DMOS technology. Low Crss ( typical 8.0 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter FQPF3N90 Units
VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 2.1
- Continuous (TC = 100°C) 1.33
IDM Drain Current - Pulsed (Note 1) 8.4 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 2.1 EAR Repetitive Avalanche Energy (Note 1) 4.3 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.34 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 2.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2000 Fairchild Semiconductor International Rev. A, September 2000
Page Summary Contents For Fairchild FQPF3N90 Data Handbook (1) (1)
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 690.80 KB |
| Published | July 22, 2026 |
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Frequently Asked Questions
What types of applications are recommended for this MOSFET?
These devices are suitable for high-efficiency switch mode power supplies.
How is its performance optimized?
The advanced technology minimizes on-state resistance, provides superior switching, and withstands high energy pulses.
What is the operating temperature range?
The component can operate in a wide range of -55 to +150 °C.
Are there any critical usage restrictions mentioned?
It is not authorized for use as a critical component in life support devices without express written approval.