Fairchild FQPF30N06 Data Handbook
Summary
This high-performance N-Channel MOSFET (FQPF30N06) is built for efficient power management, offering 21A of current at 60V using advanced planar stripe DMOS technology. It features superior switching capability and robust operation up to 175°C. The technical guide details all electrical characteristics, absolute maximum ratings, and thermal parameters, making it the ideal component for designers building reliable power solutions in automotive systems, DC/DC converters, and portable battery-operated devices.
Page 1 Text Content
FQ PF30N
May 2001
FQPF30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.04Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 19 n C) planar stripe, DMOS technology. Low Crss ( typical 40 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well
175°C maximum junction temperature rating
suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF30N06 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) 14.9
IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage ± 25 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 3.9 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.26 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 3.85 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001
Page Summary Contents For Fairchild FQPF30N06 Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 660.77 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
What is the maximum temperature rating for this MOSFET?
The device has a maximum junction temperature rating of 175°C.
What are the operating limits for drain current and voltage?
The continuous drain-source voltage (VDS) handling is 60V, with a continuous drain current up to 21A at 25°C.
How must the MOSFET be mounted or used in relation to heat dissipation?
When operating above 25°C, derating must be applied according to 0.26 W/°C for power dissipation.
Is this device suitable for critical applications like life support systems?
The product is not authorized for use as a critical component in life support devices or systems without express written approval from Fairchild Semiconductor Corporation.