Fairchild FDN340P Data Handbook
Summary
The FDN340P is a high-performance P-Channel MOSFET engineered for superior efficiency in advanced power systems. Featuring low on-state resistance and minimal gate charge, this component excels in maximizing battery life and switching reliability. The technical manual provides comprehensive specifications—including thermal characteristics, dynamic parameters, and voltage limits—making it essential for engineers designing load switching circuits, DC/DC converters, and portable electronics requiring robust power management solutions.
Page 1 Text Content
FD 340P
December 1999
FDN340P Single P-Channel, Logic Level, Power Trench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced
–2 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = –4.5 V
using Fairchild Semiconductor advanced Power Trench
RDS(ON) = 0.11 Ω @ VGS = –2.5 V.
process that has been especially tailored to minimize
RDS(ON) = 0.210 Ω @ VGS = –1.8 V.
the on-state resistance and yet maintain low gate charge for superior switching performance.
• Low gate charge (8n C typical).
These devices are well suited for portable electronics applications: Load switching and power management,
• High performance trench technology for extremely
battery charging circuits, and DC/DC conversion.
low RDS(ON) .
• High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.
Super SOT -3
Absolute Maximum Ratings T A=25o C unless otherwise noted
Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 VGSS Gate-Source Voltage ±8 ID Drain Current – Continuous (Note 1a) –2
– Pulsed –10
Power Dissipation for Single Operation (Note 1a) 0.5PD
(Note 1b) 0.46
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
FDN340P 7’’ 8mm 3000 units
1999 Fairchild Semiconductor Corporation FDN340P Rev C (W)
Page Summary Contents For Fairchild FDN340P Data Handbook
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 281.30 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What are the key applications for this MOSFET?
These devices are suited for load switching and power management, extreme battery charging circuits, and DC/DC conversion in portable electronics.
What is the typical on-state resistance (RDS(on)) at standard conditions?
The rated R_DS(on) is 0.07 W @ V = –4.5 V DS(ON) GS or 0.12 Ohm at T=125°C.
How do I handle thermal dissipation and mounting requirements?
R_Thermal Resistance, Junction-to-Case (qJC) is 75 °C/W, but actual total resistance depends on the user's board design (qJA).
What are the operational limits for input voltage and temperature?
The drain-source voltage rating is –20 V DSS, and the operating junction temperature range is -55 to +150 °C.