Fairchild FDC5614P Product Specificationsheet

FD 5614P

February 2002

FDC5614P 60V P-Channel Logic Level Power Trench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high

• –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V

voltage Power Trench process. It has been optimized for

RDS(ON) = 0.135 Ω @ VGS = –4.5 V

power management applications.

• Fast switching speed

Applications

• High performance trench technology for extremely

• DC-DC converters

low RDS(ON)

• Load switch • Power management

Super SOT -6TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –60 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) –3 A – Pulsed –20

Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .564 FDC5614P 7’’ 8mm 3000 units

2002 Fairchild Semiconductor Corporation FDC5614P Rev C1 (W)