Fairchild FDB2532 FDP2532 FDI2532 Data Manual
Summary
These N-Channel Power Trench MOSFETs are high-reliability switches rated for demanding industrial and automotive applications (up to 150V/79A). Optimized with features like low Miller Charge and UIS capability, they excel in DC/DC converters, UPS systems, and complex primary switching architectures. This comprehensive manual details the device's maximum ratings, detailed electrical characteristics (including extremely low on-resistance), dynamic switching performance, and thermal constraints necessary for robust design integration. Ideal for engineers developing reliable power management solutions in automotive load control, data centers, and high voltage synchronous rectification circuits.
Page 1 Text Content
查询FDB2532供应商
August 2002
FDB2532 / FDP2532 / FDI2532 N-Channel Power Trench® MOSFET 150V, 79A, 16mΩ Features Applications r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82n C (Typ.), VGS = 10V
Distributed Power Architectures and VRMs
Low Miller Charge
Primary Switch for 24V and 48V Systems
Low QRR Body Diode
High Voltage Synchronous Rectifier
UIS Capability (Single Pulse and Repetitive Pulse)
Direct Injection / Diesel Injection Systems
Qualified to AEC Q101
Formerly developmental type 82884 42V Automotive Load Control
Electronic Valve Train Systems
DRAIN SOURCE
DRAIN DRAIN
SOURCE (FLANGE)
(FLANGE)
DRAIN GATE GATE
SOURCE
TO-220AB
TO-263AB DRAIN TO-262AB
FDP SERIES (FLANGE)
FDB SERIES FDI SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGS Gate to Source Voltage ±20
Drain Current
AContinuous (TC = 25o C, VGS = 10V)
ID Continuous (TC = 100o C, VGS = 10V)
Continuous (Tamb = 25o C, VGS = 10V, RθJA = 43o C/W) Pulsed Figure 4
EAS Single Pulse Avalanche Energy (Note 1) m J
Power dissipation
Derate above 25o C 2.07 W/o C
TJ, TSTG Operating and Storage Temperature -55 to 175
Thermal Characteristics
RθJC Thermal Resistance Junction to Case TO-220, TO-263, TO-262 0.48
RθJA Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation FDB2532 / FDP2532 / FDI2532 Rev. B
Page Summary Contents For Fairchild FDB2532 FDP2532 FDI2532 Data Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 11 |
| File Size | 214.11 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What is the package type and reel size for FDB2532?
FDB2532 comes in TO-263AB package with a 330mm reel size and 800 units per reel.
How is power dissipation derated above 25°C?
Power dissipation derates at 2.07W/°C above 25°C.
Is this MOSFET qualified for automotive applications?
Yes, it is qualified to AEC Q101 for automotive use.