Fairchild FDB13AN06A0 FDP13AN06A0 Data Handbook

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July 2003

FDB13AN06A0 / FDP13AN06A0 N-Channel Power Trench® MOSFET 60V, 62A, 13.5mΩ Features Applications r DS(ON) = 11.5mΩ (Typ.), VGS = 10V, ID = 62A Motor / Body Load Control Qg(tot) = 22n C (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs

Primary Switch for 12V and 24V systems

Formerly developmental type 82555

DRAIN

SOURCE(FLANGE) GATE

DRAIN GATE

SOURCE DRAIN (FLANGE)TO-220AB

STO-263AB

FDP SERIES FDB SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage

VGS Gate to Source Voltage ±20 Drain Current

AContinuous (TC = 25o C, VGS = 10V)

ID Continuous (TC = 100o C, VGS = 10V)

Continuous (TA = 25o C, VGS = 10V, RθJA = 43o C/W) 10.9

Pulsed Figure 4 EAS Single Pulse Avalanche Energy (Note 1) m J Power dissipation

Derate above 25o C 0.77 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case TO-220,TO-263 1.3

RθJA Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)

RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

©2003 Fairchild Semiconductor Corporation FDB13AN06A0 / FDP13AN06A0 Rev. A1