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Toshiba RN2114, RN2115, RN2116, RN2117, RN2118 Data Manual

Summary

These are high-reliability NPN Bipolar Junction Transistors designed for critical interface, switching, and inverter circuits. This technical guide provides comprehensive operational details, including maximum ratings, detailed electrical characteristics (such as saturation voltage and current gain), and recommendations for implementing optimal bias resistor values. It is essential documentation for electronics engineers designing general purpose equipment like computer, appliance, or measuring systems who need to integrate reliable, low-power switching capability into their designs.

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Page 1 Text Content

查询RN2114供应商

RN2114RN2118

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2114,RN2115,RN2116 RN2117,RN2118

Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1114~RN1118

Equivalent Circuit and Bias Resister Values

Type No. R1 (kΩ) R2 (kΩ)

RN2114 1 10 RN2115 2.2 10 RN2116 4.7 10 RN2117 10 4.7 RN2118 47 10

JEDEC ― EIAJ ― TOSHIBA 2−2H1A Weight: 2.4mg

Maximum Ratings (Ta = 25C)

Characteristic Symbol Rating Unit

Collector-base voltage VCBO −50 V

RN2114~2118

Collector-emitter voltage VCEO −50 V

RN2114 −5 RN2115 −6

Emitter-base voltage RN2116 −7 VEBO

RN2117 −15 RN2118 −25

Collector current IC −100 m A Collector power dissipation PC 100 m W

RN2114~2118

Junction temperature Tj 150 C Storage temperature range Tstg −55~150

Page Summary Contents For Toshiba RN2114, RN2115, RN2116, RN2117, RN2118 Data Manual

Page 1 查询RN2114供应商 RN2114RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114,RN2115,RN2116 RN2117,RN2118 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Appl...
Page 2 RN2114RN2118 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Test Condition Min Typ. Max Unit Circuit RN2114~2118 ICBO VCB = −50V, IE = 0 ― ― −100 n A Collector cut-off current RN21...
Page 3 RN2114RN2118
Page 4 RN2114RN2118
Page 5 RN2114RN2118
Page 6 RN2114RN2118
Page 7 RN2114RN2118 Type Name Marking RN2114 RN2115 RN2116 RN2117 RN2118
Page 8 RN2114RN2118 000707EAARESTRICTIONS ON PRODUCT USE TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction...
Page 9 WWW.ALLDATASHEET.COM Copyright ⓒ Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.All Data Sheet.com 100% Free Data Sheet S...

Manual Details

Brand Toshiba
Pages 9
File Size 266.07 KB
Published June 04, 2026
27 views

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Frequently Asked Questions

What types of equipment are not suitable for using these transistors?

They are not intended or warranted for usage in equipment requiring extraordinarily high quality or reliability, such as medical instruments, aircraft, or atomic energy control instruments.

How can I simplify the circuit design when implementing this device?

The device includes built-in bias resistors, which simplifies circuit design and reduces the overall number of parts needed.

What is the maximum Collector current (I_C) rating for these types?

The Collector current capacity is rated at -100 mA.