Toshiba RN2101~RN2106 Data Manual
Summary
High-performance NPN bipolar junction transistors designed for critical interface, switching, and inverter circuits in general electronics applications. This manual provides comprehensive technical specifications, including maximum ratings, electrical characteristics (e.g., saturation voltage, transition frequency), and recommended built-in bias resistors (R1/R2) to simplify circuit design and reduce component count. Ideal for engineers designing robust systems such as computers, industrial controls, and domestic appliances requiring reliable solid-state switching components.
Page 1 Text Content
RN2101RN2106
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101,RN2102,RN2103 RN2104,RN2105,RN2106
Switching, Inverter Circuit, Interface Circuit
Unit: mm
And Driver Circuit Applications
With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resister Values
Type No. R1 (kΩ) R2 (kΩ)
RN2101 4.7 4.7 RN2102 10 10 RN2103 22 22 RN2104 47 47 RN2105 2.2 47 RN2106 4.7 47 JEDEC ―
EIAJ ― TOSHIBA 2-2H1A Weight: 2.4mg
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO −50 V
RN2101~2106
Collector-emitter voltage VCEO −50 V
RN2101~2104 −10
Emitter-base voltage VEBO
RN2105, 2106 −5
Collector current IC −100 m A Collector power dissipation PC 100 m W
RN2101~2106
Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C
Page Summary Contents For Toshiba RN2101~RN2106 Data Manual
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 256.73 KB |
| Published | June 05, 2026 |
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Frequently Asked Questions
What is the maximum collector power dissipation (PC) for these transistors?
The Collector power dissipation (PC) for RN2101~RN2106 is rated at 100 mW.
How are the built-in resistors used in circuit design?
They simplify circuit design, reduce the quantity of parts, and streamline the manufacturing process.
What voltages must be considered when designing the system using these components?
The maximum ratings include a Collector-base voltage (CBO) of -50 V and an Emitter-base voltage (EBO) up to -5 V.
Are there any limitations on the types of equipment where these transistors can be used?
They are intended for general electronics applications but cannot be warranted or used in equipment requiring extraordinarily high reliability, such as medical instruments or airplane systems.