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Texas Instruments TPIC5323L Data Handbook/Manual

Summary

The TPIC5323L is a robust, gate-protected 3-channel DMOS power array featuring electrically isolated N-channel transistors. This component provides reliable logic-level switching and integrated high-current zener diodes, ensuring superior overstress and ESD protection (up to 4000V). It offers an ideal solution for powering complex digital systems requiring multiple independent, isolated channels. The comprehensive datasheet covers essential electrical characteristics, detailed operating parameters, and absolute maximum ratings, making it a critical resource for hardware engineers designing high-reliability industrial and consumer electronic circuits.

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Page 1 Text Content

TPIC5323L

3-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL

POWER DMOS ARRAY

SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995

Low r DS(on) 0.6 Ω Typ D PACKAGE (TOP VIEW)

Voltage Output 60 V Input Protection Circuitry 18 V

DRAIN2 GATE1

Pulsed Current 3 A Per Channel

DRAIN2 SOURCE1

Extended ESD Capability 4000 V SOURCE2 SOURCE1

Direct Logic-Level Interface SOURCE2 DRAIN1 GATE2 DRAIN1 description DRAIN3 SOURCE3 DRAIN3 SOURCE3

The TPIC5323L is a monolithic gate-protected

GND GATE3

logic-level power DMOS array that consists of three electrically isolated independent N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-p F capacitor in series with a 1.5-kΩ resistor. The TPIC5323L is offered in a standard 16-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature of –40°C to 125°C.

schematic

DRAIN1 DRAIN2 GATE3 DRAIN3GATE2

GATE1

ZC1b ZC2b ZC3b

ZC1a ZC2a ZC3a

14, 15 3, 4 10, 11 SOURCE1 GND SOURCE2 SOURCE3

NOTE A: For correct operation, no terminal can be taken below GND.

Copyright  1995, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Page Summary Contents For Texas Instruments TPIC5323L Data Handbook/Manual

Page 1 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 Low r DS(on) 0.6 Ω Typ D PACKAGE (TOP VIEW) Voltage Output 60 V Input Prot...
Page 2 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 absolute maximum ratings over operating case temperature range (unless otherwise noted)† Drain-to-sourc...
Page 3 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UN...
Page 4 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 resistive-load switching characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td(on) T...
Page 5 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 PARAMETER MEASUREMENT INFORMATION VDD = 25 V tf1tr1 RL 5 V Pulse Generator 0 V td(off) td(on) 50 ΩRgen ...
Page 6 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED at e- to -S rc re sh ld lt ag (t SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 PARAMETER MEASUREMENT INFORMATION VDD = 25 V Pulse Generator 0 V (see ...
Page 7 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 ta ti ra in -t -S rc er ce ta it (o TYPICAL CHARACTERISTICS -S ta te es is ta ce STATIC DRAIN-TO-SOURCE...
Page 8 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED ra in -t -S rc lt ag ap ac it an ce SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 TYPICAL CHARACTERISTICS CAPACITANCE SOURCE-TO-DRAIN DIODE CURRENT v...
Page 9 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 ax im ra in rr en THERMAL INFORMATION MAXIMUM DRAIN CURRENT MAXIMUM PEAK AVALANCHE CURRENT vs vs DRAIN-...
Page 10 TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 Ju ct io -t -B ar er al es is ta ce /W JBθ THERMAL INFORMATION D PACKAGE† JUNCTION-TO-BOARD THERMAL RES...
Page 11 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain...

Manual Details

Brand Texas Instruments
Pages 11
File Size 194.82 KB
Published June 19, 2026
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Frequently Asked Questions

What is the maximum ESD protection voltage offered by this device?

It provides up to 4000 V of ESD protection using specific testing methods.

Are there limitations on running certain terminals relative to ground (GND)?

No, according to NOTE A, no terminal can be taken below GND for correct operation.

What is the recommended operating temperature range?

The product is characterized for operation over a case temperature range of –40°C to 125°C.

How resistant are the DMOS transistors to gate damage?

They feature integrated high-current zener diodes ($Z_{C ext{a}}$ and $Z_{C ext{b}}$) to prevent gate damage during overstress conditions.