Texas Instruments THS4011, THS4012 - 290-MHz Low-Distortion High-Speed Amplifiers Data Manual Specification User Guide

查询THS4011供应商 THS4011, THS4012

290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

SLOS216B – JUNE 1999 – FEBRUARY 2000

Very High Speed THS4011 THS4012 JG, D AND DGN PACKAGE D AND DGN† PACKAGE

– 290 MHz Bandwidth (G = 1, –3 d B)

(TOP VIEW) (TOP VIEW)

– 310 V/µs Slew Rate – 37 ns Settling Time (0.1%) 1OUT VCC+

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Very Low Distortion IN– VCC+ 1IN– 2OUT – THD = –80 d Bc (f = 1 MHz, RL = 150 Ω) IN+ OUT 1IN+ 2IN– VCC– NC –VCC 2IN+

110 m A Output Current Drive (Typical) 7.5 n V/√Hz Voltage Noise

NC – No internal connection

Excellent Video Performance – 70 MHz Bandwidth (0.1 d B, G = 1) – 0.006% Differential Gain Error Cross Section View Showing

Power PAD Option (DGN)

– 0.01° Differential Phase Error

±5 V to ±15 V Supply Voltage This device is in the Product Preview stage of development. Please contact your local TI sales office for availability.

Available in Standard SOIC, MSOP Power PAD, JG, or FK Packages

THS4011 Evaluation Module Available FK PACKAGE (TOP VIEW)

description The THS4011 and THS4012 are very high speed, single/dual, voltage feedback amplifiers ideal for

a wide range of applications. The devices offer NC NC

very good ac performance with 290-MHz

IN– VCC+

bandwidth, 310-V/µs slew rate, and 37-ns settling

NC NC

time (0.1%). These amplifiers have a high output

IN+ OUT

drive capability of 110 m A and draw only 7.8-m A supply current per channel. For applications NC NC requiring low distortion, the THS4011/12 operate with a total harmonic distortion (THD) of –80 d Bc LL at f = 1 MHz. For video applications, the THS4011/12 offer 0.1 d B gain flatness to 70-MHz,

0.006% differential gain error, and 0.01° differential phase error.

RELATED DEVICES

DEVICE DESCRIPTION THS4011/2 290-MHz Low Distortion High-Speed Amplifiers THS4031/2 100-MHz Low Noise High Speed-Amplifiers THS4061/2 180-MHz High-Speed Amplifiers

CAUTION: THE THS4011 AND THS4012 provide ESD protection circuitry. However, permanent damage can still occur if this device is subjected to high-energy electrostatic discharges. Proper ESD precautions are recommended to avoid any performance degradation or loss of functionality.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Copyright  2000, Texas Instruments Incorporated

Products conform to specifications per the terms of Texas Instruments On products compliant to MIL-PRF-38535, all parameters are tested standard warranty. Production processing does not necessarily include unless otherwise noted. On all other products, production testing of all parameters. processing does not necessarily include testing of all parameters.

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