ROHM SIR-563ST3F Data Sheet
Summary
This high-efficiency GaAs Infrared Light Emitting Diode is designed for compact optical control systems and remote device applications. Featuring a 940nm peak wavelength and wide radiation angle, it is perfectly suited for integration with silicon detectors. The provided manual offers comprehensive technical data, including detailed tables and graphs of electrical/optical characteristics (Po, V-I curves, spectral performance) across various temperatures, ensuring reliable selection and optimal use in advanced electronic equipment.
Page 1 Text Content
SIR-563ST3F
Sensors
Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a Ga As infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for compact optical control equipment.
Applications Dimensions (Unit : mm)
Optical control equipment
Light source for remote control devices
Notes: 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference.
Features 1) High efficiency, high output PO=11.0m W (IF=50m A).
2) Wide radiation angle θ1/2=15deg. 3) Emission spectrum well suited to silicon detectors.
(λP=940nm).
4) Good current-optical output linearity. 2. 5± ax .1
in .2 8. 7± 0.
5) Long life, high reliability.
Anode Cathode
Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Limits Unit
Forward current IF m A
Reverse voltage VR 5.0
Power dissipation PD m W
Pulse forward current IFP∗ 0.5
Operating temperature Topr −25 to +85 °C
Storage temperature Tstg −40 to +85 °C ∗ Pulse width=0.1msec, duty ratio 1%
Rev.A 1/3
Page Summary Contents For ROHM SIR-563ST3F Data Sheet
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 4 |
| File Size | 69.67 KB |
| Published | June 18, 2026 |
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